Improved oxidation behavior of Hf0.11Al0.20B0.69 in comparison to Hf0.28B0.72 magnetron sputtered thin films
The oxidation resistance of Hf<sub>0.28</sub>B<sub>0.72</sub> and Hf<sub>0.11</sub>Al<sub>0.20</sub>B<sub>0.69</sub> thin films was investigated comparatively at 700 °C for up to 8 h. Single-phase solid solution thin films were co-sputtered from HfB<sub>2</sub> and AlB<sub>2</sub> compound targets. After oxidation at 700 °C for 8 h an oxide scale thickness of 31 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>±</mml:mo></mml:math> 2 nm was formed on Hf<sub>0.11</sub>Al<sub>0.20</sub>B<sub>0.69</sub> which corresponds to 14% of the scale thickness measured on Hf<sub>0.28</sub>B<sub>0.72</sub>. The improved oxidation resistance can be rationalized based on the chemical composition and the morphology of the formed oxide scales. On Hf<sub>0.28</sub>B<sub>0.72</sub> the formation of a porous, O, Hf, and B-containing scale and the formation of crystalline HfO<sub>2</sub> is observed. Whereas on Hf<sub>0.11</sub>Al<sub>0.20</sub>B<sub>0.69</sub> a dense, primarily amorphous scale containing O, Al, B as well as approximately 3 at% of Hf forms, which reduces the oxidation kinetics significantly by passivation. Benchmarking Hf<sub>0.11</sub>Al<sub>0.20</sub>B<sub>0.69</sub> with Ti-Al-based boride and nitride thin films with similar Al concentrations reveals superior oxidation behavior of the Hf-Al-based thin film. The incorporation of few at% of Hf in the oxide scale decelerates oxidation kinetics at 700 °C and leads to a reduction in oxide scale thickness of 21% and 47% compared to Ti<sub>0.12</sub>Al<sub>0.21</sub>B<sub>0.67</sub> and Ti<sub>0.27</sub>Al<sub>0.21</sub>N<sub>0.52</sub>, respectively. Contrary to Ti-Al-based diborides, Hf<sub>0.11</sub>Al<sub>0.20</sub>B<sub>0.69</sub> shows excellent oxidation behavior despite B-richness.
Authors
- Marcus Hans (ORCID: https://orcid.org/0000-0002-1814-3101)
- Daniel Primetzhofer (ORCID: https://orcid.org/0000-0002-5815-3742)
- P. Pöllmann (ORCID: https://orcid.org/0000-0002-7819-7494)
- P. Polcik (ORCID: https://orcid.org/0000-0003-3111-0029)
- Peter Schweizer (ORCID: https://orcid.org/0000-0002-8873-0950)
- Jochen M. Schneider (ORCID: https://orcid.org/0000-0003-1239-1961)
- Damian M. Holzapfel (ORCID: https://orcid.org/0000-0002-0374-094X)
- Lukas Löfler (ORCID: https://orcid.org/0000-0001-6726-5132)
- Ganesh Kumar Nayak (ORCID: https://orcid.org/0000-0002-6996-8998)
- Pauline Kümmerl
- Amir Hossein Navidi Kashani (ORCID: https://orcid.org/0000-0002-1175-7477)
- S. Kolozsvári (ORCID: https://orcid.org/0000-0002-3397-7681)
- Johann Michler (ORCID: https://orcid.org/0000-0001-8860-4068)
- Sebastian Lellig (ORCID: https://orcid.org/0009-0008-7182-2884)
Institutions
- Uppsala University (SE)
- Plansee (Germany) (DE)
- Swiss Federal Laboratories for Materials Science and Technology (CH)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Scientific Reports
- Published
- 2024-09-17
- DOI
- https://doi.org/10.1038/s41598-024-72134-3
- Citations
- 3
- Primary Topic
- MXene and MAX Phase Materials
- Type
- article
- Field-Weighted Citation Impact
- 0.35
Funders
- Deutsche Forschungsgemeinschaft
- Vetenskapsrådet
- Uppsala Universitet
- RWTH Aachen University