Nano-CeO2 for the Photocatalytic Degradation of the Complexing Agent Citric Acid in Cu Chemical Mechanical Polishing

Cu interconnect chemical mechanical polishing (CMP) technology has been continuously evolving, leading to increasingly stringent post-CMP cleaning requirements. To address the environmental pollution caused by traditional post-CMP cleaning solutions, we have explored the use of photocatalytic processes to remove citric acid, which is a commonly used complexing agent for CMP. In this study, CeO2 abrasives, characterized by a hardness of 5.5, are extensively employed in CMP. Importantly, CeO2 also exhibits a suitable band structure with a band gap of 2.27 eV, enabling it to photocatalytically remove citric acid, a commonly used complexing agent in Cu CMP. Additionally, the integration of H2O2, an essential oxidant in Cu CMP, enhances the photocatalytic degradation efficiency. The research indicates that the removal rate of single-phase CeO2 was 1.78 mmol/g/h and the degradation efficiency increased by 40% with the addition of H2O2, attributed to the hydroxyl radicals generated from a Fenton-like reaction between H2O2 and CeO2. These findings highlight the potential of photocatalytic processes to improve organic contaminant removal in post-CMP cleaning, offering a more sustainable alternative to conventional practices.