Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.

Authors

Institutions

Publication Details

Journal
AIP Advances
Published
2024-09-01
DOI
https://doi.org/10.1063/5.0208706
Citations
2
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.62

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

Ke Xu, Qizhi Zhu, Songyuan Xia, Jianfeng Wang et al.
2 citations
AIP Advances
GaN-based semiconductor devices and materials
0.62
article

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates

Ke Xu, Qizhi Zhu, Songyuan Xia, Jianfeng Wang, Yumin Zhang, Yuanhang Sun, Weiyi Jin, Juemin Yi
article en
2 citations

Abstract

This study investigates leakage mechanisms in vertical GaN-on-GaN Schottky barrier diodes (SBDs) and demonstrates effective mitigation strategies. The fabricated devices exhibit low reverse leakage current (1 × 10−5 A/cm2 at −200 V) and a high Ion/Ioff ratio (∼1010), surpassing the performance of GaN SBDs on foreign substrates. We elucidate dominant leakage mechanisms—thermionic emission, Poole–Frenkel emission, and variable-range hopping—and their evolution with temperature and bias. Optimized fabrication processes, including defect etching and a novel dual-layer passivation technique, achieve over a 1000-fold reduction in leakage current.

AIP AdvancesVol. 14(9)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Openalex Percentile: Top 33%
GaN-based semiconductor devices and materials
0.62
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates — Ke Xu, Qizhi Zhu, et al. · AIP Advances (2024) | TGRS Research Map | TGRS