Study and optimising performance of enhancement‐mode monolithically integrated white‐light <scp>HEMT</scp>‐<scp>LED</scp> by inserting of <scp>InGaN</scp> quantum wells

Abstract In this paper five enhancement‐mode monolithically integrated white‐light High electron mobility transistors‐light emitting diodes (HEMT‐LED) structures are proposed and simulated to obtain maximum light intensity, drain current I d and maximum trans‐conductance g m . In first four HEMT‐LED structures white light is generated by combining inbuilt yellow and blue lights and in fifth proposed structure the white light is generated with the combination of inbuilt red, green and blue lights. The InGaN quantum wells (QWs) are inserted in to e‐mode ITO/p‐GaN gate HEMT structures and the desired wavelength of light spectrums are generated by changing the in content (mole fraction), to obtain inbuilt white light. Among five proposed structures one shows Maximum I d‐max of 925 mA and maximum g m of 250 mS, which is significantly higher than any HEMT‐LED structures reported before. All the proposed structures are simulated in Silvaco TCAD software.