Field-Effect Transistor Based on MoSi₂N₄ Monolayer for Digital Logic Applications

A sub-nanometer field-effect transistor (FET) with MoSi2N4 as the channel material is investigated using non-equilibrium Green’s function (NEGF) formalism for possible application in modern digital technology. The transistor input, output, and transfer characteristics are reported for 0.6 V supply. The output and transfer characteristics of the drain current versus the drain-source and gate-source voltages are investigated. The nMOS transistor ON-current is found to be two and a half times greater than that of the pMOS. In addition, the pMOS transistor shows about two orders of magnitudes smaller OFF-current with respect to nMOS, one for short channel length. The low value of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{\text {OFF}}$ </tex-math></inline-formula> leads to lower static power, fascinating to digital applications. The BSIM4 model version 4.8 is utilized for extracting the mid-frequency model with a precision of more than 99%. An evident matching between NEGF and Berkeley Short-channel IGFET Model (BSIM) models is observed for the investigated logic.