A 2.5D Multichip SiC MOSFET Power Module With Low Parasitic Inductance and High Dynamic Current Sharing Performance

The parasitic inductance and dynamic current sharing performances of multichip silicon carbide power module packaging limit the device's performance. Moreover, high electrical properties cannot be achieved in traditional 2-D packaging, and the 3-D packaging manufacturing process is complicated with a necessity for further reliability verification. To solve these problems, a novel 2.5-D wire-bonding packaging was designed in this article, which combines the advantages of the simple structure of 2-D packaging and the high electrical performance of 3-D packaging. Without introducing any additional substrates, a highly symmetrical 3-D commutation loop is formed solely through a distinctive layout and terminal structure. The terminal structure was optimized to achieve extremely low parasitic inductance and excellent dynamic current sharing performance considering the mutual inductance coupling. Due to the compact commutation loop, the proposed power module with a 2.5-D packaging structure could attain a parasitic inductance of 2.31 nH and balanced dynamic currents. A 1200 V/520 A 2.5-D power module was fabricated for verification. The experimental results effectively validated the low parasitic inductance and high dynamic current sharing performances.