Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs

A single-input, dual-output digital gate driver (DGD) IC is proposed, to solve the device characteristic variation problem and the parasitic inductance variation problem on PCBs in two parallel-connected SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small>s. This article is the first in the world to achieve all of 1) fully integrated two sensor output processing circuits, two DGDs and a controller required to detect and equalize the drain current variation of two parallel-connected SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small>s on a gate driver IC, 2) equalization of dc and surge components of drain current of each <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> in a closed loop, and 3) demonstration measurements of drain current equalization under a total of four conditions, with and without SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> characteristic variations and with and without parasitic inductance variations.

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Publication Details

Journal
IEEE Transactions on Power Electronics
Published
2024-09-17
DOI
https://doi.org/10.1109/tpel.2024.3462535
Citations
3
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.63
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article

Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs

Makoto Takamiya, S. Hayashi, Kohei Horii, Katsuhiro Hata et al.
3 citations
IEEE Transactions on Power Electronics
Silicon Carbide Semiconductor Technologies
0.63
article

Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs

Makoto Takamiya, S. Hayashi, Kohei Horii, Katsuhiro Hata, Keiji Wãda, Ichiro Omura
article en
3 citations

Abstract

A single-input, dual-output digital gate driver (DGD) IC is proposed, to solve the device characteristic variation problem and the parasitic inductance variation problem on PCBs in two parallel-connected SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small>s. This article is the first in the world to achieve all of 1) fully integrated two sensor output processing circuits, two DGDs and a controller required to detect and equalize the drain current variation of two parallel-connected SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small>s on a gate driver IC, 2) equalization of dc and surge components of drain current of each <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> in a closed loop, and 3) demonstration measurements of drain current equalization under a total of four conditions, with and without SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> characteristic variations and with and without parasitic inductance variations.

IEEE Transactions on Power ElectronicsVol. 40(1)
Kyushu Institute of Technology (JP), Tokyo Metropolitan University (JP), The University of Tokyo (JP)
Affordable and clean energy
Openalex Percentile: Top 31%
Silicon Carbide Semiconductor Technologies
0.63
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Single-Input Dual-Output Digital Gate Driver IC Automatically Equalizing Drain Current Variations of Two Parallel-Connected SiC MOSFETs — Makoto Takamiya, S. Hayashi, et al. · IEEE Transactions on Power Electronics (2024) | TGRS Research Map | TGRS