Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications
Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band <xref ref-type="bibr" rid="ref1" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[1]</xref>, with the latest result of a >10-Gb/s data rate <xref ref-type="bibr" rid="ref2" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[2]</xref>. In the case of point-to-point wireless links, III–V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s <xref ref-type="bibr" rid="ref2" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">[2]</xref>.
Authors
- James W. Pomeroy (ORCID: https://orcid.org/0000-0003-3443-8759)
- Enrico Zanoni (ORCID: https://orcid.org/0000-0001-7349-9656)
- Umesh K. Mishra (ORCID: https://orcid.org/0000-0001-8084-9247)
- Farid Medjdoub (ORCID: https://orcid.org/0000-0002-4753-4718)
- Jeong‐Sun Moon (ORCID: https://orcid.org/0000-0003-1371-5120)
- Fabian Thome (ORCID: https://orcid.org/0000-0002-1902-4323)
- Terirama Thingujam (ORCID: https://orcid.org/0000-0002-8762-7468)
- Matthew Guidry (ORCID: https://orcid.org/0000-0002-5344-9157)
- Eduardo M. Chumbes (ORCID: https://orcid.org/0009-0001-2013-7747)
- Matteo Meneghini (ORCID: https://orcid.org/0000-0003-2421-505X)
- Martin Kuball (ORCID: https://orcid.org/0000-0003-3070-1070)
- Gaudenzio Meneghesso (ORCID: https://orcid.org/0000-0002-6715-4827)
- K. Shinohara (ORCID: https://orcid.org/0000-0001-5077-8249)
Institutions
- Centre National de la Recherche Scientifique (FR)
- RTX (United States) (US)
- University of Padua (IT)
- University of California, Santa Barbara (US)
- HRL Laboratories (United States) (US)
- University of Bristol (GB)
- Fraunhofer Institute for Applied Solid State Physics (DE)
- Institut d'Electronique, de Microélectronique et de Nanotechnologie (FR)
- Teledyne Technologies (United States) (US)
Publication Details
- Journal
- IEEE Microwave Magazine
- Published
- 2024-09-17
- DOI
- https://doi.org/10.1109/mmm.2024.3428188
- Citations
- 18
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 5.60
Funders
- Defense Advanced Research Projects Agency