High Performance Ga₄SnO₈ Nanorod and GaN Heterojunction Self-Powered Photodetector by Hydrothermal Method

Solar-blind ultraviolet photodetectors have received significant attention due to their extensive applications in both military and civilian fields. There is a need to develop self-powered photodetectors that exhibit high performance, characterized by attributes such as rapid response speed and enhanced responsivity, among others. In this work, a thin film of Ga4SnO8 nanorods was synthesized on a GaN substrate using low-cost hydrothermal method. The device showed excellent performance at 0 V bias voltage, with a maximum responsivity of 1.82 A/W, a detection rate of 6.45 × 1013 Jones, an external quantum efficiency of 8.23 × 102% at a wavelength of 275 nm UV light, a fast response time of 7 ms, and a decay time of 18 ms, respectively. The electron transport mechanism in the GaN/Ga4SnO8 heterojunction was analyzed through an analysis of the band diagram. Overall, this heterojunction photodetector has demonstrated significant potential for solar blind ultraviolet light detection. Its combination of self-powering capabilities, high performance, and rapid response makes it a promising candidate for applications requiring sensitive and reliable UV detection without interference from sunlight.