High Voltage and High Frequency DC Power Supply with Ultra High Voltage SiC Schottky Barrier Diode Modules

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Publication Details

Journal
Journal of The Japan Institute of Electronics Packaging
Published
2024-09-17
DOI
https://doi.org/10.5104/jiep.jiep-d-24-00014
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
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article

High Voltage and High Frequency DC Power Supply with Ultra High Voltage SiC Schottky Barrier Diode Modules

Yuki Nomura, Tsuyoshi Funaki
Journal of The Japan Institute of Electronics Packaging
Silicon Carbide Semiconductor Technologies
article

High Voltage and High Frequency DC Power Supply with Ultra High Voltage SiC Schottky Barrier Diode Modules

Yuki Nomura, Tsuyoshi Funaki
article en

Abstract

No abstract available for this paper.
Journal of The Japan Institute of Electronics PackagingVol. 28(1)
The University of Osaka (JP)
Affordable and clean energy
Openalex Percentile: Top 87%
Silicon Carbide Semiconductor Technologies
DOISourceOpenAlex
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