Numerical simulation of lead-free MASnI3 perovskite/silicon heterojunction for solar cells and photodetectors

Lead free n-type doped methyl ammonium tin iodide (MASnI 3 ) perovskite/p-Silicon heterojunction (HJ) for solar cells and photodetectors are simulated using AFORS-HET automat simulation software. In the earlier work, lead based methyl ammonium lead iodide perovskite/silicon (n-MAPbI 3 /p-Si) heterojunction devices were studied. In view of the toxicity and environmental concerns related to lead, it is substituted with tin to make lead-free tin based perovskite to make n-MASnI 3 /p-Si HJ devices. Various parameters associated with the layers of MASnI 3 perovskite and silicon wafer like, Band gap, thickness, doping concentration and texturing angle have been optimized. Various transparent conducting oxide (TCO) materials like indium tin oxide (ITO) and zinc oxide (ZnO) are used and its performance with ideal device is compared. Various metals are considered as front and back contact, to obtain best metals for each sides. This study investigates the potential of lead-free perovskite materials in solar cells, achieving a notable efficiency improvement compared to traditional lead-based counterparts. Our numerical simulations demonstrate that the optimized lead-free perovskite with structures, n-MASnI 3 /p-Si heterojunction can reach efficiencies of 27.2%. These findings suggest that lead-free perovskites could serve as a viable, environmentally friendly alternative in the photovoltaic industry. • Lead-free doped MASnI 3 perovskite/Silicon heterojunction solar cells. • Maximum efficiency of 27.2% efficiency for n-MASnI 3 /p-Si HJ solar cell. • Thickness, band gap, doping density, texturing angle, metal work function at front contact/back contact of layers optimized. • Role of TCO (ITO and ZnO) absorber layer studied. • Band bending of layers on using different metals as front contact studied.