Semiconductor-metal transition in TlPbF<sub>3</sub> under isotropic pressure and its impact on optical, elastic and mechanical properties: a DFT computation with HSE06

Abstract This research aims to comprehensively evaluate the structure, elasticity, mechanics, anisotropy, electrical properties, and optical attributes of TlPbF 3 at pressures from 0 to 60 GPa. A cubic structure of the material remains same without any phase changes, but there is a reduction in the lattice parameters. The material is determined to be mechanically secure by doing calculations on a variety of mechanical and elastic characteristics, including bulk, shear, and Young’s modulus, stiff, and not particularly flexible. It also shows a significant resistance to shear force. The material’s ability to withstand high pressures, its metallic bond nature, and ductility have been shown by the Kleinman’s parameter, Poisson’s ratio, Cauchy pressure, and Pugh ratio. Anisotropy can be confirmed by activating specific anisotropy factors. When we consider the electronic band structure, we observe a transition from a broad gap in the band (3.719 eV) comparable with a small band distance (0.65 eV), and converts to a metal (0 eV). To explore this, we have estimated the total, partial and elemental partial density of states. Additionally, we have computed the real and imaginary functions of dielectric, absorption factor, refractive index, extinction coefficient, loss function, reflectivity and real/imaginary conductivity to assess the material’s applicability. As pressure is applied, the static values of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="italic">ε</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> </mml:msub> <mml:mo stretchy="false">(</mml:mo> <mml:mi mathvariant="italic">ω</mml:mi> <mml:mo stretchy="false">)</mml:mo> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo stretchy="false">(</mml:mo> <mml:mi mathvariant="italic">ω</mml:mi> <mml:mo stretchy="false">)</mml:mo> </mml:math> increase. This material is also well-suited for optoelectronic devices due to its high conductivity, reflectivity, absorption, and refractive index.

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Publication Details

Journal
Physica Scripta
Published
2024-09-17
DOI
https://doi.org/10.1088/1402-4896/ad7bfa
Citations
3
Primary Topic
Inorganic Fluorides and Related Compounds
Type
article
Field-Weighted Citation Impact
0.48
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article

Semiconductor-metal transition in TlPbF3 under isotropic pressure and its impact on optical, elastic and mechanical properties: a DFT computation with HSE06

Sofia Siddique, I. Zeba, S.S.A. Gillani, M. Shakil‎ et al.
3 citations
Physica Scripta
Inorganic Fluorides and Related Compounds
0.48
article

Semiconductor-metal transition in TlPbF3 under isotropic pressure and its impact on optical, elastic and mechanical properties: a DFT computation with HSE06

Sofia Siddique, I. Zeba, S.S.A. Gillani, M. Shakil‎, Bilal Ahmad, Sana Zafar
article en
3 citations

Abstract

Abstract This research aims to comprehensively evaluate the structure, elasticity, mechanics, anisotropy, electrical properties, and optical attributes of TlPbF 3 at pressures from 0 to 60 GPa. A cubic structure of the material remains same without any phase changes, but there is a reduction in the lattice parameters. The material is determined to be mechanically secure by doing calculations on a variety of mechanical and elastic characteristics, including bulk, shear, and Young’s modulus, stiff, and not particularly flexible. It also shows a significant resistance to shear force. The material’s ability to withstand high pressures, its metallic bond nature, and ductility have been shown by the Kleinman’s parameter, Poisson’s ratio, Cauchy pressure, and Pugh ratio. Anisotropy can be confirmed by activating specific anisotropy factors. When we consider the electronic band structure, we observe a transition from a broad gap in the band (3.719 eV) comparable with a small band distance (0.65 eV), and converts to a metal (0 eV). To explore this, we have estimated the total, partial and elemental partial density of states. Additionally, we have computed the real and imaginary functions of dielectric, absorption factor, refractive index, extinction coefficient, loss function, reflectivity and real/imaginary conductivity to assess the material’s applicability. As pressure is applied, the static values of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi mathvariant="italic">ε</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>1</mml:mn> </mml:mrow> </mml:msub> <mml:mo stretchy="false">(</mml:mo> <mml:mi mathvariant="italic">ω</mml:mi> <mml:mo stretchy="false">)</mml:mo> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mi>n</mml:mi> <mml:mo stretchy="false">(</mml:mo> <mml:mi mathvariant="italic">ω</mml:mi> <mml:mo stretchy="false">)</mml:mo> </mml:math> increase. This material is also well-suited for optoelectronic devices due to its high conductivity, reflectivity, absorption, and refractive index.

Physica ScriptaVol. 99(10)
University of Engineering and Technology Lahore (PK), Lahore College for Women University (PK), Islamia University of Bahawalpur (PK), Government College University, Lahore (PK)
Openalex Percentile: Top 43%
Inorganic Fluorides and Related Compounds
0.48
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