Cu2FeSnS4-based heterojunction solar cells with M O (M=Cu, Ni)-back surface field layers: Impact of defect density states and recombination

Copper-based chalcogenide quaternary semiconductors have emerged as promising candidates for next-generation photovoltaic (PV) devices, owing to their unique electronic and photonic properties coupled with environmentally friendly compositions. This study explores the potential of copper-based absorber materials, specifically Cu 2 FeSnS 4 (CFTS), as an absorber in heterojunction solar cells with Cu-/Ni-metal oxides back surface field (BSF) and SnS 2 buffer layers using the SCAPS-1D Simulator. Initially, we assess the performance of CFTS-absorber solar cells and compare the key photovoltaic metrics with those of other Cu-based semiconductors including CuIn x Ga (1- x ) Se 2 (CIGS), Cu 2 ZnSnS 4 (CZTS), Cu 2 CoSnS 4 (CCTS), Cu 2 NiSnS 4 (CNTS), Cu 2 BaSnS 4 (CBTS), Cu 2 MnSnS 4 (CMTS), to identify the most promising absorber. Subsequently, we optimize the layer properties, including active layer thickness, free-carrier concentration, bulk and interface defect density, and carrier recombination in potential CFTS. Further, we examine the impact of defects, and carrier recombination, including radiative, Shockley-Read-Hall (SRH), and Auger recombination. These detailed studies yield improved and competitive photoconversion efficiency, ( PCE ) of 27.31% (compared to 24.68%, without BSF) with open circuit voltage, ( V OC ) of 1.36 V, short-circuit current density, ( J SC ) of 22.28 mA/cm² and fill factor, ( FF ) of 90.47% for Cu 2 O, whereas the PCE of 26.97% with V OC of 1.07 V, J SC of 28.82 mA/cm² and FF of 86.91% for NiO x BSF layer in Au/Mo/BSF(Cu 2 O and NiO x )/CFTS/SnS 2 /ZnMgO/ZnO:Al/Pt configurations under optimized conditions. The enhanced charge separation and carrier collection efficiencies reveal the strong potential of CFTS absorber heterostructures with Cu 2 O/NiO x , SnS 2, and bi-layer ZnMgO/ZnO:Al as BSF, buffer, and window layers, repectively, providing insights and resources for developing high-efficiency CFTS-based photovoltaic devices.

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Publication Details

Journal
Next Energy
Published
2024-09-17
DOI
https://doi.org/10.1016/j.nxener.2024.100196
Citations
6
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.25

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article

Cu2FeSnS4-based heterojunction solar cells with M O (M=Cu, Ni)-back surface field layers: Impact of defect density states and recombination

Abu Kowsar, Syed Farid Uddin Farhad, Abdul Kuddus, Md. Shafayet-Ul-Islam et al.
6 citations
Next Energy
Chalcogenide Semiconductor Thin Films
1.25
article

Cu2FeSnS4-based heterojunction solar cells with M O (M=Cu, Ni)-back surface field layers: Impact of defect density states and recombination

Abu Kowsar, Syed Farid Uddin Farhad, Abdul Kuddus, Md. Shafayet-Ul-Islam, Md Kabiruzzaman
article en
6 citations

Abstract

Copper-based chalcogenide quaternary semiconductors have emerged as promising candidates for next-generation photovoltaic (PV) devices, owing to their unique electronic and photonic properties coupled with environmentally friendly compositions. This study explores the potential of copper-based absorber materials, specifically Cu 2 FeSnS 4 (CFTS), as an absorber in heterojunction solar cells with Cu-/Ni-metal oxides back surface field (BSF) and SnS 2 buffer layers using the SCAPS-1D Simulator. Initially, we assess the performance of CFTS-absorber solar cells and compare the key photovoltaic metrics with those of other Cu-based semiconductors including CuIn x Ga (1- x ) Se 2 (CIGS), Cu 2 ZnSnS 4 (CZTS), Cu 2 CoSnS 4 (CCTS), Cu 2 NiSnS 4 (CNTS), Cu 2 BaSnS 4 (CBTS), Cu 2 MnSnS 4 (CMTS), to identify the most promising absorber. Subsequently, we optimize the layer properties, including active layer thickness, free-carrier concentration, bulk and interface defect density, and carrier recombination in potential CFTS. Further, we examine the impact of defects, and carrier recombination, including radiative, Shockley-Read-Hall (SRH), and Auger recombination. These detailed studies yield improved and competitive photoconversion efficiency, ( PCE ) of 27.31% (compared to 24.68%, without BSF) with open circuit voltage, ( V OC ) of 1.36 V, short-circuit current density, ( J SC ) of 22.28 mA/cm² and fill factor, ( FF ) of 90.47% for Cu 2 O, whereas the PCE of 26.97% with V OC of 1.07 V, J SC of 28.82 mA/cm² and FF of 86.91% for NiO x BSF layer in Au/Mo/BSF(Cu 2 O and NiO x )/CFTS/SnS 2 /ZnMgO/ZnO:Al/Pt configurations under optimized conditions. The enhanced charge separation and carrier collection efficiencies reveal the strong potential of CFTS absorber heterostructures with Cu 2 O/NiO x , SnS 2, and bi-layer ZnMgO/ZnO:Al as BSF, buffer, and window layers, repectively, providing insights and resources for developing high-efficiency CFTS-based photovoltaic devices.

Next EnergyVol. 6
American International University-Bangladesh (BD), Ritsumeikan University (JP), Bangladesh Council of Scientific and Industrial Research (BD), University of Dhaka (BD)
Ritsumeikan University, Bangladesh Council of Scientific and Industrial Research
Affordable and clean energy
Openalex Percentile: Top 20%
Chalcogenide Semiconductor Thin Films
1.25
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