Thermal effects on damping determination of perpendicular MRAM devices by spin-torque ferromagnetic resonance
We report device-level damping measurements using spin-torque driven ferromagnetic resonance on perpendicular magnetic random-access memory cells. It is shown that thermal agitation enhances the apparent damping for cells smaller than about 55 nm. The effect is fundamental and does not reflect a true damping increase. In addition to the thermal effect, it is still found that device-level damping is higher than film-level damping and increases with decreasing cell size. This is attributed to edge damage caused by device patterning.
Authors
- M. Grobis (ORCID: https://orcid.org/0000-0003-0362-6888)
- Rajesh V. Chopdekar (ORCID: https://orcid.org/0000-0001-6727-6501)
- N. D. Melendez
- Jonathan Gibbons (ORCID: https://orcid.org/0000-0001-8491-0658)
- Tiffany Santos (ORCID: https://orcid.org/0000-0002-7427-3744)
- Wonjoon Jung (ORCID: https://orcid.org/0009-0003-3477-2236)
- Hans Richter (ORCID: https://orcid.org/0000-0002-4903-1807)
- G. Mihajlović (ORCID: https://orcid.org/0000-0002-3002-2396)
Institutions
- Western Digital (United States) (US)
Publication Details
- Journal
- Journal of Applied Physics
- Published
- 2024-09-17
- DOI
- https://doi.org/10.1063/5.0231388
- Citations
- 2
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.68