Electro-absorption modulation of a III–V-on-silicon DFB laser co-integrated with SOA boosters at 32 Gbps NRZ

Authors

Stéphane Malhouitre (ORCID: https://orcid.org/0000-0002-5464-4835)
Claire Besançon (ORCID: https://orcid.org/0000-0001-7502-1365)
J. Décobert (ORCID: https://orcid.org/0000-0002-1610-9559)
David Bitauld (ORCID: https://orcid.org/0000-0003-3682-7467)
Nicolas Vaissière (ORCID: https://orcid.org/0000-0003-3568-1670)
Joan Manel Ramírez (ORCID: https://orcid.org/0000-0002-3613-2633)
Karim Hassan (ORCID: https://orcid.org/0000-0002-5518-8229)
Delphine Néel
Amin Souleiman Dabar
K. Merghem
Alexandre Shen (ORCID: https://orcid.org/0009-0003-0772-8512)

Institutions

Institut Polytechnique de Paris (FR)
Télécom SudParis (FR)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-22
Primary Topic: Diamond and Carbon-based Materials Research
Type: article
Field-Weighted Citation Impact: 0.00

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article

Electro-absorption modulation of a III–V-on-silicon DFB laser co-integrated with SOA boosters at 32 Gbps NRZ

Stéphane Malhouitre, Claire Besançon, J. Décobert, David Bitauld et al.

Sep 22, 2024

SPIRE - Sciences Po Institutional REpository

Diamond and Carbon-based Materials Research

article

Electro-absorption modulation of a III–V-on-silicon DFB laser co-integrated with SOA boosters at 32 Gbps NRZ

Stéphane Malhouitre, Claire Besançon, J. Décobert, David Bitauld, Nicolas Vaissière, Joan Manel Ramírez, Karim Hassan, Delphine Néel, Amin Souleiman Dabar, K. Merghem, Alexandre Shen

September 22, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Institut Polytechnique de Paris (FR), Télécom SudParis (FR)

Affordable and clean energy

Openalex Percentile: Top 91%

Diamond and Carbon-based Materials Research

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