Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

In this paper, the static and dynamic characterization of a High Voltage (10kV) 4H-SiC Bipolar Junction Transistor (BJT) is presented. Using a high-voltage source in vacuum conditions, a breakdown voltage of 11 kV was measured. Results showed that both large and small BJTs exhibit similar on-state resistance per unit area and collector current density of 55 A.cm -2 . The current gain increases with a decrease in temperature, indicating reduced charge carrier recombination at lower thermal energies. Also, BJT have been characterized in switching mode at 1 kV. The study concludes that 4H-SiC BJT demonstrates promising electrical performance for high-efficiency applications in harsh environments.

Authors

Institutions

Publication Details

Journal
Key engineering materials
Published
2025-09-05
DOI
https://doi.org/10.4028/p-t0vjdb
Primary Topic
Silicon Carbide Semiconductor Technologies
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Dominique Planson, Sigo Scharnholz, Camille Sonneville, Pascal Bevilacqua et al.
Key engineering materials
Silicon Carbide Semiconductor Technologies
article

Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor

Dominique Planson, Sigo Scharnholz, Camille Sonneville, Pascal Bevilacqua, Pierre Brosselard, Bertrand Vergne, Brenda Fosso-Sob, Hervé Morel, Mihai Lazar
article en

Abstract

In this paper, the static and dynamic characterization of a High Voltage (10kV) 4H-SiC Bipolar Junction Transistor (BJT) is presented. Using a high-voltage source in vacuum conditions, a breakdown voltage of 11 kV was measured. Results showed that both large and small BJTs exhibit similar on-state resistance per unit area and collector current density of 55 A.cm -2 . The current gain increases with a decrease in temperature, indicating reduced charge carrier recombination at lower thermal energies. Also, BJT have been characterized in switching mode at 1 kV. The study concludes that 4H-SiC BJT demonstrates promising electrical performance for high-efficiency applications in harsh environments.

Key engineering materialsVol. 1021
Université Claude Bernard Lyon 1 (FR), Université de Technologie de Troyes (FR), Centre de Nanosciences et de Nanotechnologies (FR), Laboratoire Ampère (FR), Institut Franco-Allemand de Recherches de Saint-Louis (FR), Light, nanomaterials, nanotechnologies, Institut National des Sciences Appliquées de Lyon (FR)
Agence Nationale de la Recherche
Affordable and clean energy
Openalex Percentile: Top 100%
Silicon Carbide Semiconductor Technologies
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.

Electrical Characterization of HV (10 Kv) Power 4H-SiC Bipolar Junction Transistor — Dominique Planson, Sigo Scharnholz, et al. · Key engineering materials (2025) | TGRS Research Map | TGRS