The fabrication of polyimide-based tunable ternary memristors doped with Ni-Co coated carbon composite nanofibers

Polymer matrix composite memristors exhibit exceptional performances, including a straightforward structure, rapid operational speed, high density, good scalability, cost-effectiveness, and superior mechanical flexibility for wearable applications. This study utilizes sensitized chemical evaporation and spin coating carbonization techniques to fabricate composite nanofibers doped with Nickel-Cobalt coated multi-walled carbon nanotubes (SC-NCMTs). A novel polyimide matrix composite memory device was fabricated using in-situ polymerization technology. The transmission electron microscopy (TEM) and micro-Raman spectroscopy analyses validate the presence of dual interfaces structure locating between the Ni-Co-MWNTs, carbon nanofibers and PI matrix and a large number of defects in the SC-NCMTs/PI composite films, resulting in tunable ternary resistive switching behaviors of the composite memory device, exhibiting good ON/OFF current ratio of 10 4 and a retention time of 2500 s under operating voltages V onset ≤ 3 V. Based on the interface layer distribution and the defects in the composites, different physical models are comprised to investigate the charge transmission mechanism underlying the multilevel resistive switching behaviors. The studies on the impact of tunable multi-interfaces trap structures on multilevel resistive switching could enhance the data storage capabilities of polymer matrix memristors.