Engineering PbSnSe Heterostructures for Luminescence Out to 8 µm at Room Temperature

Abstract Low‐cost, room‐temperature operating light emitters in the 3–8 µm mid‐wave infrared wavelengths are desired for a broad range of applications such as chemical spectroscopy and infrared scene projection. The photoluminescence properties of PbSnSe ternary alloys grown by molecular beam epitaxy on (001) GaAs are studied in this work. Despite a large threading dislocation density, much greater than 10 9 cm −2 , room temperature photoluminescence out to a peak wavelength of 8.4 µm is observed. In situ surface passivation with amorphous GeSe and an optimized thick PbSe buffer layer are shown to be necessary for enabling bright photoluminescence in PbSnSe heterostructures, stemming from Sn‐related defect complexes generated from ambient exposure and lying near the GaAs interface. Luminescence is found to be strongly blueshifted by unrelaxed tensile strains associated with thermal expansion and lattice constant mismatch, which makes emission wavelengths farther in the infrared more difficult to achieve. Carrier recombination analysis indicates room for further improvement as luminescence efficiencies are still limited by extrinsic mechanisms rather than intrinsic Auger recombination. Overall, this work demonstrates the exciting potential of PbSnSe for spontaneous emission in the mid‐wave infrared at room temperature, alongside more established material platforms like InAsSb.