Flexible Superconducting Wiring for Integration with Low-Temperature Detector and Readout Fabrication

We present a method of creating high-density superconducting flexible wiring on flexible thin silicon substrates. The flexible wiring, called <i>SOI flex</i>, is created by depositing superconducting wiring on a silicon-on-insulator (SOI) wafer, selectively etching away the thicker silicon section <i>handle</i> layer, and bending the thinner silicon <i>device</i> layer. We show measurements of superconducting transition temperature and critical current for Mo, Nb, and Al on SOI flex. We discuss the expected advantages of SOI flex for low-temperature detector applications, as well as the role of stress and strain in bent silicon and niobium.

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Publication Details

Journal
Journal of Low Temperature Physics
Published
2024-09-14
DOI
https://doi.org/10.1007/s10909-024-03209-8
Citations
1
Primary Topic
Superconducting and THz Device Technology
Type
article
Field-Weighted Citation Impact
0.33

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article

Flexible Superconducting Wiring for Integration with Low-Temperature Detector and Readout Fabrication

D. R. Schmidt, Daniel S. Swetz, W. B. Doriese, Mark W. Keller et al.
1 citations
Journal of Low Temperature Physics
Superconducting and THz Device Technology
0.33
article

Flexible Superconducting Wiring for Integration with Low-Temperature Detector and Readout Fabrication

D. R. Schmidt, Daniel S. Swetz, W. B. Doriese, Mark W. Keller, Joel N. Ullom, Leila R. Vale, J. A. B. Mates, G. C. O’Neil, Joel C. Weber, Robinjeet Singh, Avirup Roy, Kelsey M. Morgan, Michael Vissers
article en
1 citations

Abstract

We present a method of creating high-density superconducting flexible wiring on flexible thin silicon substrates. The flexible wiring, called <i>SOI flex</i>, is created by depositing superconducting wiring on a silicon-on-insulator (SOI) wafer, selectively etching away the thicker silicon section <i>handle</i> layer, and bending the thinner silicon <i>device</i> layer. We show measurements of superconducting transition temperature and critical current for Mo, Nb, and Al on SOI flex. We discuss the expected advantages of SOI flex for low-temperature detector applications, as well as the role of stress and strain in bent silicon and niobium.

Journal of Low Temperature PhysicsVol. 217(3-4)
National Institute of Standards and Technology (US), University of Colorado Boulder (US)
National Institutes of Health
Openalex Percentile: Top 35%
Superconducting and THz Device Technology
0.33
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Flexible Superconducting Wiring for Integration with Low-Temperature Detector and Readout Fabrication — D. R. Schmidt, Daniel S. Swetz, et al. · Journal of Low Temperature Physics (2024) | TGRS Research Map | TGRS