Validation of van der Waals Interface for Enhanced Resistive Switching Performance in Memristor by Using Topotactic Phase Transition Material
This study examines the impact of the contact interface on metal/oxide/metal memristors using SrFeOx (SFO) as the oxide layer. Two methods were used to prepare the Au top electrode: electron beam evaporation and a transfer process. The transfer process was found to reduce oxygen ion migration at the Au/SFO interface by eliminating surface damage caused by gold atoms during evaporation. As a result, the memristor’s ON/OFF current ratio improved from 25 to 4000, and resistance dispersion decreased from 32.4% to 3.8%. The memristor also achieved 91.5% accuracy in the VGG16 network for CIFAR-10 image recognition.
Authors
- Ruizi Xiao
- P. T. Lai (ORCID: https://orcid.org/0000-0002-6679-0055)
- Runqing Zhang (ORCID: https://orcid.org/0009-0002-1844-1245)
- Mingxing Gong
- Xiangshui Miao
- Weichao Jiang (ORCID: https://orcid.org/0000-0002-0446-8386)
- Weiming Cheng (ORCID: https://orcid.org/0000-0002-9676-2178)
- Chenglin Shen (ORCID: https://orcid.org/0000-0003-0802-7737)
- Rui Su (ORCID: https://orcid.org/0009-0006-5586-2048)
- Duan Yu-feng
- Yuheng Deng
- Jingping Xu
Institutions
- China University of Geosciences (CN)
- Huazhong University of Science and Technology (CN)
- University of Hong Kong (HK)
Publication Details
- Journal
- ACS Applied Electronic Materials
- Published
- 2024-09-13
- DOI
- https://doi.org/10.1021/acsaelm.4c01309
- Citations
- 4
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.83
Funders
- Research Grants Council, University Grants Committee
- National Key Research and Development Program of China
- Fundamental Research Funds for the Central Universities