Optimizing deposition parameters and characterizing TiO₂ thin films for future memristor applications

Abstract Titanium dioxide (TiO 2 ) thin films were deposited on glass substrates using Spray Pyrolysis technique, with variations in multiple deposition parameters. The molarity of the precursor was altered within a small range from 0.09 M–0.15 M. The deposition temperature was systematically adjusted from 200 °C to 400 °C while the ratio between precursor and chelating agent varied between 1:1,1:2 and 1:3. The thickness of TiO 2 films were found to be in the range of 216 nm to 14.9 μm. Structural analysis conducted by XRD confirmed the formation of anatase TiO 2 thin films. Optical studies using UV-Visible spectrophotometer determined the absorption and indirect bandgap ranging from 299 nm to 326 nm and 3.08 eV to 3.44 eV respectively. Electrical studies carried out evaluated the leakage currents and DC resistivity for all individual films with the input voltage applied from ± 0.5 V to ± 5V. Impedance studies were conducted by varying input voltages from 0.2V–3V for each film, so as to examine the resultant impedance, dielectric constant, dielectric loss, conductivity, admittance and modulus spectra. The obtained results were analysed to optimise the deposition parameters for designing future memristors with specific individual or combined characteristics, such as high ON/OFF, switching speed, endurance and retention.