The structure control of MoC optimizes charge transfer to improve solar cell performance

Highly active counter electrodes with controllable morphology create new opportunities for the development of dye-sensitized solar cells. Controllable morphology accompanied by maximization of the use of active substances is a vital challenge. Herein, Integrated MoC quantum dots (QD) on different carbon frameworks to form solid flower-like MoC QD @SCF, hollow flower-like MoC QD @HCF1 and MoC QD @HCF2 with varying degrees of hollowness. The as-prepared MoC QD @HCF2 counter electrode (CE) displays a splendid tri-iodide reduction reaction (T-IRR). The power conversion efficiency (PCE) of DSSCs with MoC QD @HCF2 reaches 9.03%, which is higher than that of Pt CE (8.41%), MoC QD @HCF1 (8.24%) and MoC QD @SCF (7.81%). This controllable morphology strategy shows potential applications and provides new insights into energy conversion and storage devices.

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Publication Details

Journal
Functional Materials Letters
Published
2024-09-12
DOI
https://doi.org/10.1142/s1793604725510099
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

The structure control of MoC optimizes charge transfer to improve solar cell performance

Shibin Lu, Ying Meng, Wen Wang, Guang Li et al.
Functional Materials Letters
Chalcogenide Semiconductor Thin Films
article

The structure control of MoC optimizes charge transfer to improve solar cell performance

Shibin Lu, Ying Meng, Wen Wang, Guang Li, Jixin Yao
article en

Abstract

Highly active counter electrodes with controllable morphology create new opportunities for the development of dye-sensitized solar cells. Controllable morphology accompanied by maximization of the use of active substances is a vital challenge. Herein, Integrated MoC quantum dots (QD) on different carbon frameworks to form solid flower-like MoC QD @SCF, hollow flower-like MoC QD @HCF1 and MoC QD @HCF2 with varying degrees of hollowness. The as-prepared MoC QD @HCF2 counter electrode (CE) displays a splendid tri-iodide reduction reaction (T-IRR). The power conversion efficiency (PCE) of DSSCs with MoC QD @HCF2 reaches 9.03%, which is higher than that of Pt CE (8.41%), MoC QD @HCF1 (8.24%) and MoC QD @SCF (7.81%). This controllable morphology strategy shows potential applications and provides new insights into energy conversion and storage devices.

Functional Materials LettersVol. 18(01)
Anhui University (CN), Hefei Normal University (CN), Chaohu University (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 87%
Chalcogenide Semiconductor Thin Films
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