Study of the Characteristics of Ba0.6Sr0.4Ti1-xMnxO3-Film Resistance Random Access Memory Devices

In this study, Ba_0.6Sr_0.4Ti_1-xMn_xO₃ ceramics were fabricated by a novel ball milling technique followed by spin-coating to produce thin-film resistive memories. Measurements were made using field emission scanning electron microscopes, atomic force microscopes, X-ray diffractometers, and precision power meters to observe, analyze, and calculate surface microstructures, roughness, crystalline phases, half-height widths, and memory characteristics. Firstly, the effect of different sintering methods with different substitution ratios of Mn⁴⁺ for Ti⁴⁺ was studied. The surface microstructural changes of the films prepared by the one-time sintering method were compared with those of the solid-state reaction method, and the effects of substituting a small amount of Ti⁴⁺ with Mn⁴⁺ on the physical properties were analyzed. Finally, the optimal parameters obtained in the first part of the experiment were used for the fabrication of the thin-film resistive memory devices. The voltage and current characteristics, continuous operation times, conduction mechanisms, activation energies, and hopping distances of two types of thin-film resistive memory devices, BST and BSTM, were measured and studied under different compliance currents.