Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

Abstract Undoped and Cr doped β-Ga 2 O 3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arc.sec for undoped β-Ga 2 O 3 crystals whereas the 100 and 200 ppm of Cr doped β-Ga 2 O 3 crystals display multiple rocking curves with large peak widths indicating the presence of structural defects. Raman measurements reveal broadening in the vibrational mode of ~ 350 cm − 1 with a shoulder peak indicating the Cr 3+ dopants preferentially substitute for Ga 3+ at the octahedral sites. Further, the Cr doped β-Ga 2 O 3 crystals display strong optical absorption bands about 420 and 597 nm in the UV-Vis spectroscopy. Moreover, the observation of sharp characteristic photoluminescence emission lines at 690 and 697 nm also confirms the Cr substitution in the doped crystals. The indentation hardness increases nearly linear from 13.0 ± 0.6 to 17.9 ± 0.4 GPa whilst the indentation modulus decreases from 224.9 ± 21.4 to 202.4 ± 11.9 GPa upon Cr doping of 200 ppm in β-Ga 2 O 3 . The structural defects caused by the Cr doping interrupt the movement of indentation induced dislocations that results in the increase of hardness of the Cr doped β-Ga 2 O 3 (100) single crystals.

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Publication Details

Journal
Applied Physics A
Published
2024-09-12
DOI
https://doi.org/10.1007/s00339-024-07870-4
Citations
3
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
0.35

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article

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

E. P. Amaladass, P. Vijayakumar, R. Ramaseshan, R. M. Sarguna et al.
3 citations
Applied Physics A
Ga2O3 and related materials
0.35
article

Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals

E. P. Amaladass, P. Vijayakumar, R. Ramaseshan, R. M. Sarguna, S. Ganesamoorthy, Sujoy Sen, Kumaravelu Ganesan, M. Suganya, P. Ramasamy
article en
3 citations

Abstract

Abstract Undoped and Cr doped β-Ga 2 O 3 (100) single crystals are grown by optical floating zone method. The full width at half maximum of rocking curve is found to be 106 arc.sec for undoped β-Ga 2 O 3 crystals whereas the 100 and 200 ppm of Cr doped β-Ga 2 O 3 crystals display multiple rocking curves with large peak widths indicating the presence of structural defects. Raman measurements reveal broadening in the vibrational mode of ~ 350 cm − 1 with a shoulder peak indicating the Cr 3+ dopants preferentially substitute for Ga 3+ at the octahedral sites. Further, the Cr doped β-Ga 2 O 3 crystals display strong optical absorption bands about 420 and 597 nm in the UV-Vis spectroscopy. Moreover, the observation of sharp characteristic photoluminescence emission lines at 690 and 697 nm also confirms the Cr substitution in the doped crystals. The indentation hardness increases nearly linear from 13.0 ± 0.6 to 17.9 ± 0.4 GPa whilst the indentation modulus decreases from 224.9 ± 21.4 to 202.4 ± 11.9 GPa upon Cr doping of 200 ppm in β-Ga 2 O 3 . The structural defects caused by the Cr doping interrupt the movement of indentation induced dislocations that results in the increase of hardness of the Cr doped β-Ga 2 O 3 (100) single crystals.

Applied Physics AVol. 130(10)
Homi Bhabha National Institute (IN), Indira Gandhi Centre for Atomic Research (IN), Sathyabama Institute of Science and Technology (IN), Sri Sivasubramaniya Nadar College of Engineering (IN)
Indira Gandhi Centre for Atomic Research
Openalex Percentile: Top 51%
Ga2O3 and related materials
0.35
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