Band Gap Adjustable Antimony Selenosulfide Indoor Photovoltaics with 20% Efficiency

Antimony selenosulfide Sb 2 (S x Se 1− x ) 3 is featured as a stable, environment‐friendly, and low‐cost light‐harvesting material with a tunable bandgap in the range of 1.1–1.8 eV, satisfying the requirement of indoor photovoltaics (IPVs). Up to now, the certified efficiency of Sb 2 (S x Se 1− x ) 3 solar cell with 1.45 eV bandgap has broken 10% under standard illumination (AM1.5G). However, this bandgap is not suitable for IPVs in terms of spectral matching. Herein, for the first time, the effect of optical bandgap of Sb 2 (S x Se 1− x ) 3 on photovoltaic performance of the devices under AM1.5G and indoor light conditions is studied systematically. It is discovered that although an appropriate Se/S atomic ratio is beneficial for improving the crystallinity of Sb 2 (S x Se 1− x ) 3 film and passivating the trap states, the band gap remains a key factor in determining the suitability of this material for IPVs. As a result, solar cells based on Sb 2 S 3 with a large bandgap of 1.74 eV achieve an optimal efficiency of 20.34% under 1000 lux indoor illumination. Moreover, a high IPV efficiency of over 16% can still be maintained within a wide bandgap range from 1.5 to 1.7 eV, demonstrating the great potential of Sb‐based chalcogenide as a light‐harvesting material for IPVs.

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Publication Details

Journal
Solar RRL
Published
2024-09-01
DOI
https://doi.org/10.1002/solr.202400389
Citations
18
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
3.76

Funders

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article

Band Gap Adjustable Antimony Selenosulfide Indoor Photovoltaics with 20% Efficiency

Ting Wu, Qi Rui Zhao, Rongfeng Tang, Huihui Gao et al.
18 citations
Solar RRL
Chalcogenide Semiconductor Thin Films
3.76
article

Band Gap Adjustable Antimony Selenosulfide Indoor Photovoltaics with 20% Efficiency

Ting Wu, Qi Rui Zhao, Rongfeng Tang, Huihui Gao, Xiaoqi Peng, Tao Chen, Haolin Wang, Yuqian Huang, Jianyu Li, Shuwei Sheng
article en
18 citations

Abstract

Antimony selenosulfide Sb 2 (S x Se 1− x ) 3 is featured as a stable, environment‐friendly, and low‐cost light‐harvesting material with a tunable bandgap in the range of 1.1–1.8 eV, satisfying the requirement of indoor photovoltaics (IPVs). Up to now, the certified efficiency of Sb 2 (S x Se 1− x ) 3 solar cell with 1.45 eV bandgap has broken 10% under standard illumination (AM1.5G). However, this bandgap is not suitable for IPVs in terms of spectral matching. Herein, for the first time, the effect of optical bandgap of Sb 2 (S x Se 1− x ) 3 on photovoltaic performance of the devices under AM1.5G and indoor light conditions is studied systematically. It is discovered that although an appropriate Se/S atomic ratio is beneficial for improving the crystallinity of Sb 2 (S x Se 1− x ) 3 film and passivating the trap states, the band gap remains a key factor in determining the suitability of this material for IPVs. As a result, solar cells based on Sb 2 S 3 with a large bandgap of 1.74 eV achieve an optimal efficiency of 20.34% under 1000 lux indoor illumination. Moreover, a high IPV efficiency of over 16% can still be maintained within a wide bandgap range from 1.5 to 1.7 eV, demonstrating the great potential of Sb‐based chalcogenide as a light‐harvesting material for IPVs.

Solar RRLVol. 8(18)
University of Science and Technology of China (CN), Xinyang Normal University (CN), Hefei National Center for Physical Sciences at Nanoscale (CN)
Innovative Research Group Project of the National Natural Science Foundation of China, National Natural Science Foundation of China, Hefei Science Center, Chinese Academy of Sciences, National Key Research and Development Program of China
Openalex Percentile: Top 6%
Chalcogenide Semiconductor Thin Films
3.76
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