Band Gap Adjustable Antimony Selenosulfide Indoor Photovoltaics with 20% Efficiency
Antimony selenosulfide Sb 2 (S x Se 1− x ) 3 is featured as a stable, environment‐friendly, and low‐cost light‐harvesting material with a tunable bandgap in the range of 1.1–1.8 eV, satisfying the requirement of indoor photovoltaics (IPVs). Up to now, the certified efficiency of Sb 2 (S x Se 1− x ) 3 solar cell with 1.45 eV bandgap has broken 10% under standard illumination (AM1.5G). However, this bandgap is not suitable for IPVs in terms of spectral matching. Herein, for the first time, the effect of optical bandgap of Sb 2 (S x Se 1− x ) 3 on photovoltaic performance of the devices under AM1.5G and indoor light conditions is studied systematically. It is discovered that although an appropriate Se/S atomic ratio is beneficial for improving the crystallinity of Sb 2 (S x Se 1− x ) 3 film and passivating the trap states, the band gap remains a key factor in determining the suitability of this material for IPVs. As a result, solar cells based on Sb 2 S 3 with a large bandgap of 1.74 eV achieve an optimal efficiency of 20.34% under 1000 lux indoor illumination. Moreover, a high IPV efficiency of over 16% can still be maintained within a wide bandgap range from 1.5 to 1.7 eV, demonstrating the great potential of Sb‐based chalcogenide as a light‐harvesting material for IPVs.
Authors
- Ting Wu (ORCID: https://orcid.org/0000-0002-2806-1126)
- Qi Rui Zhao (ORCID: https://orcid.org/0000-0002-1369-6823)
- Rongfeng Tang (ORCID: https://orcid.org/0000-0002-2211-5859)
- Huihui Gao (ORCID: https://orcid.org/0000-0003-3298-0309)
- Xiaoqi Peng
- Tao Chen (ORCID: https://orcid.org/0000-0002-3483-8341)
- Haolin Wang (ORCID: https://orcid.org/0000-0001-8783-3782)
- Yuqian Huang
- Jianyu Li (ORCID: https://orcid.org/0009-0008-2426-8075)
- Shuwei Sheng
Institutions
- University of Science and Technology of China (CN)
- Xinyang Normal University (CN)
- Hefei National Center for Physical Sciences at Nanoscale (CN)
Publication Details
- Journal
- Solar RRL
- Published
- 2024-09-01
- DOI
- https://doi.org/10.1002/solr.202400389
- Citations
- 18
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 3.76
Funders
- Innovative Research Group Project of the National Natural Science Foundation of China
- National Natural Science Foundation of China
- Hefei Science Center, Chinese Academy of Sciences
- National Key Research and Development Program of China