Comparative Thermo-electric Analysis of Void and Wire Diameter Variation for Two Packages TO-251 and TO-252 Using Die-attach Sintered Ag

With the expansion of the power semiconductor market, the reliability issues of power semiconductors have become increasingly important. The package process involves wafer saw, bonding, molding, and Die-attach processes. In the Die-attach process, sintered Ag material using a sintering process is used. If voids occur in this process, it can lead to an increase in the device&quots temperature. In this study, a comparative analysis was conducted using TO-251 and TO-252 packages. We examined the maximum junction temperature, power dissipation, and thermal resistance, investigating the impact of voids on the package. Additionally, we explored changes in thermal characteristics based on variations in wire diameter.