Optimizing Spin Lifetime Enhancement in Graphene-Based Spintronic Devices through Interface Engineering

We investigated the impact of interface engineering on spin lifetime in graphene-based spintronic devices using theoretical modeling and simulations. Our results showed that optimized interface engineering increased spin lifetime by up to 300% and reduced spin relaxation rates by up to 50% compared to pristine graphene. Modifying electron-phonon coupling strength and interface engineering parameters enhanced spin lifetime from 1.2 ns to 4.5 ns and reduced spin relaxation rate from 1.1×10^8 s^(-1) to 5.5×10^7 s^(-1). These findings demonstrate the potential of interface engineering for improving graphene-based spintronic devices. Our results provide quantitative guidelines for device design and optimization, highlighting the importance of considering interface engineering in graphene-based spintronics. This research paves the way for the development of high-performance graphene-based spintronic devices.