Thermal Interaction and Cooling of Electronic Device with Chiplet 2.5D Integration

With the development of artificial intelligence (AI) and high-performance computing (HPC), the microelectronic industry is challenged with increased device integration density. Chiplet architecture can break through a variety of limitations on the system-on-chip (SoC) to create a high-computility system. However, chiplet heterogeneous integration suffers from high heat flux and serious thermal interaction problems. The factors affecting thermal interaction are not clear. In this paper, a collective parameter model and a distribution parameter model are developed to clarify the optimization method to mitigate thermal interaction. The trends predicted by the parameter model are consistent with the finite element method (FEM) simulation results. Furthermore, to cool the chiplets, a thermal test vehicle is designed and fabricated, and the cooling performance of the test vehicle with different flow rates, different TIMs (Thermal Interfacial Materials) (DOW5888 vs. liquid metal), and different heat modes is experimentally investigated. Compared with DOW5888, the utilization of liquid metal TIM can mitigate thermal interaction by 56% and 76% at flow rates of 0.2 L/min and 0.8 L/min, respectively. Consequently, at a temperature rise of 60 °C and a flow rate of 0.8 L/min, using liquid metal TIM can achieve heat fluxes of 330 W/cm2 and 520 W/cm2 for two chiplets, respectively.

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Publication Details

Journal
Applied Sciences
Published
2024-09-10
DOI
https://doi.org/10.3390/app14188114
Citations
5
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
1.04

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article

Thermal Interaction and Cooling of Electronic Device with Chiplet 2.5D Integration

Jianyu Feng, Liqiang Cao, Chuan Chen, Qidong Wang et al.
5 citations
Applied Sciences
3D IC and TSV technologies
1.04
article

Thermal Interaction and Cooling of Electronic Device with Chiplet 2.5D Integration

Jianyu Feng, Liqiang Cao, Chuan Chen, Qidong Wang, Minghao Zhou
article en
5 citations

Abstract

With the development of artificial intelligence (AI) and high-performance computing (HPC), the microelectronic industry is challenged with increased device integration density. Chiplet architecture can break through a variety of limitations on the system-on-chip (SoC) to create a high-computility system. However, chiplet heterogeneous integration suffers from high heat flux and serious thermal interaction problems. The factors affecting thermal interaction are not clear. In this paper, a collective parameter model and a distribution parameter model are developed to clarify the optimization method to mitigate thermal interaction. The trends predicted by the parameter model are consistent with the finite element method (FEM) simulation results. Furthermore, to cool the chiplets, a thermal test vehicle is designed and fabricated, and the cooling performance of the test vehicle with different flow rates, different TIMs (Thermal Interfacial Materials) (DOW5888 vs. liquid metal), and different heat modes is experimentally investigated. Compared with DOW5888, the utilization of liquid metal TIM can mitigate thermal interaction by 56% and 76% at flow rates of 0.2 L/min and 0.8 L/min, respectively. Consequently, at a temperature rise of 60 °C and a flow rate of 0.8 L/min, using liquid metal TIM can achieve heat fluxes of 330 W/cm2 and 520 W/cm2 for two chiplets, respectively.

Applied SciencesVol. 14(18)
Chinese Academy of Sciences (CN), Institute of Microelectronics (CN), University of Chinese Academy of Sciences (CN), Nanjing University (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Youth Innovation Promotion Association
Openalex Percentile: Top 23%
3D IC and TSV technologies
1.04
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