Features of Structural and Phase Transformations in Layers of Ni–Pt–V Alloy on Silicon During Rapid Heat Treatment

Using the methods of Rutherford backscattering, X-ray phase analysis, transmission electron microscopy and diffraction, the features of structural and phase transformations in layers of Ni–Pt–V alloy with a thickness of 30 nm on the surface of monocrystalline n -Si(111) under rapid heat treatment with incoherent constant-power light flux from quartz halogen lamps directed to the reverse side of the substrate for a duration of 7 s until a temperature of 350 to 500 °С is reached have been established. It is shown that under these conditions of heat treatment, the formation of Ni x Si y layers occurs, characterized by varying degrees of ordering (epitaxy). It was found that rapid heat treatment at a temperature of 350 °С is accompanied by a redistribution of nickel and silicon atoms to the composition ∼Ni 3 Si at the film-substrate interface with a decrease in the proportion of Si towards the surface with the formation of domains of the hexagonal (P321) phase of the β-Ni 31 Si 12 silicide epitaxial to the substrate. Rapid heat treatment at temperature from 400 to 500 °С leads to a further diffusion redistribution of the reacting components to a composite composition of ∼Ni 50 Si 50 and the formation of an orthorhombic (Pnma) phase of NiSi silicide having a transrotational degree of epitaxy. In this case, the ordered growth of NiSi silicide occurs on the epitaxial domains of β-Ni 31 Si 12 , which persist at the interface between the silicide and the substrate up to a temperature of 500 °С.