Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes
In this work, we report the capacitance recovery behavior in the blue quantum dot light-emitting diode (QLED) by capacitance–voltage (C–V) characterizations. A comprehensive study of the C–V, dC/dV–V, and current density–voltage characteristics of pristine and shelf-aged devices suggests that capacitance recovery is associated with space charge-induced charge accumulation. At lower temperatures, the capacitance recovery in the shelf-aged device is efficiently suppressed due to the difficulty in building up the space charge, which supports our argument. Moreover, the capacitance recovery behavior of QLED only happens at low frequencies (a few hundred hertz), which is related to the time constant for charge accumulation at the selected voltage. Our work shows the effect of space charge on device capacitance and enriches the comprehension of carrier processes in QLED under AC measurement.
Authors
- Jingrui Ma (ORCID: https://orcid.org/0000-0002-3227-7835)
- Xiao Wei Sun (ORCID: https://orcid.org/0000-0002-2840-1880)
- Xiangwei Qu (ORCID: https://orcid.org/0009-0001-7149-4218)
- Kai Wang (ORCID: https://orcid.org/0000-0003-0443-6955)
- Depeng Li (ORCID: https://orcid.org/0000-0001-9650-6249)
Institutions
- Southern University of Science and Technology (CN)
Publication Details
- Journal
- Applied Physics Letters
- Published
- 2024-09-09
- DOI
- https://doi.org/10.1063/5.0226752
- Citations
- 2
- Primary Topic
- Quantum Dots Synthesis And Properties
- Type
- article
- Field-Weighted Citation Impact
- 0.23
Funders
- National Natural Science Foundation of China
- Development and Reform Commission of Shenzhen Municipality
- Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting
- National Key Research and Development Program of China