Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes

In this work, we report the capacitance recovery behavior in the blue quantum dot light-emitting diode (QLED) by capacitance–voltage (C–V) characterizations. A comprehensive study of the C–V, dC/dV–V, and current density–voltage characteristics of pristine and shelf-aged devices suggests that capacitance recovery is associated with space charge-induced charge accumulation. At lower temperatures, the capacitance recovery in the shelf-aged device is efficiently suppressed due to the difficulty in building up the space charge, which supports our argument. Moreover, the capacitance recovery behavior of QLED only happens at low frequencies (a few hundred hertz), which is related to the time constant for charge accumulation at the selected voltage. Our work shows the effect of space charge on device capacitance and enriches the comprehension of carrier processes in QLED under AC measurement.

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Publication Details

Journal
Applied Physics Letters
Published
2024-09-09
DOI
https://doi.org/10.1063/5.0226752
Citations
2
Primary Topic
Quantum Dots Synthesis And Properties
Type
article
Field-Weighted Citation Impact
0.23

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article

Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes

Jingrui Ma, Xiao Wei Sun, Xiangwei Qu, Kai Wang et al.
2 citations
Applied Physics Letters
Quantum Dots Synthesis And Properties
0.23
article

Space charge-induced capacitance recovery in blue quantum dot light-emitting diodes

Jingrui Ma, Xiao Wei Sun, Xiangwei Qu, Kai Wang, Depeng Li
article en
2 citations

Abstract

In this work, we report the capacitance recovery behavior in the blue quantum dot light-emitting diode (QLED) by capacitance–voltage (C–V) characterizations. A comprehensive study of the C–V, dC/dV–V, and current density–voltage characteristics of pristine and shelf-aged devices suggests that capacitance recovery is associated with space charge-induced charge accumulation. At lower temperatures, the capacitance recovery in the shelf-aged device is efficiently suppressed due to the difficulty in building up the space charge, which supports our argument. Moreover, the capacitance recovery behavior of QLED only happens at low frequencies (a few hundred hertz), which is related to the time constant for charge accumulation at the selected voltage. Our work shows the effect of space charge on device capacitance and enriches the comprehension of carrier processes in QLED under AC measurement.

Applied Physics LettersVol. 125(11)
Southern University of Science and Technology (CN)
National Natural Science Foundation of China, Development and Reform Commission of Shenzhen Municipality, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, National Key Research and Development Program of China
Openalex Percentile: Top 51%
Quantum Dots Synthesis And Properties
0.23
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