Modeling the <i>dV</i> _CE <i>/dt</i> and <i>dI</i> _C/<i>dt</i> at the Turn-On Transient for High-Voltage IGBTs in the Clamped Inductive Circuit

The insulated gate bipolar transistor (IGBT) is widely used in power electronic systems, such as the power transmission and high-speed traction systems. The collector–emitter voltage falling slope (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</sub>/<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dt</i>) and collector current rising slope (<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dI</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub>/<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dt</i>) in the turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> stage significantly affect the turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> loss and electromagnetic interference. This article focuses on the turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> behavior of high-voltage IGBTs under the clamped inductive load and deduces the analytical temperature-dependent expressions of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dV</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">CE</sub>/<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dt</i> and <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dI</i><sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">C</sub>/<italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">dt</i>. Based on the hyperbolic approximation assumption of carrier distribution, the transient behavior of IGBT in the turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> process is analyzed, which overcomes the shortcoming that the influence of carrier recombination is not considered in the existing studies. The accuracy of the proposed model is verified by comparing the simulation waveform with the experimental data obtained from the typical clamped inductive circuit. The proposed analytical temperature-dependent model can accurately simulate the turn-<sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> behavior of high-voltage IGBTs under the clamped inductive load.