Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector
Abstract Red–green–blue (RGB) micro light-emitting diodes (micro-LEDs) without distributed Bragg reflector (DBR), with air-separating DBR, and with integrated DBR, were demonstrated. The effect of the DBRs as reflectors on the external quantum efficiency (EQE) and electroluminescence spectra enhancement of RGB micro-LEDs was systematically investigated for realizing higher-performance micro-LEDs for display applications. At 5 A cm −2 , the EQEs of the RGB micro-LEDs with integrated DBR were improved by 38%, 33%, and 32%, respectively, with comparison to the RGB DBR free micro-LEDs. Further, the full width at half maximum (FWHM) of the red micro-LEDs was reduced by 4.3 nm at 50 A cm −2 with the integrated DBR due to the higher enhancement of the central wavelength spectrum. The green and blue micro-LEDs with integrated DBR had higher EQE and the red micro-LEDs with integrated DBR had narrower FWHM compared to those with air-separating DBR. However, the peak wavelength of the RGB micro-LEDs with integrated DBR shifted, resulting in a lower color gamut in CIE 1931. The above work provides guidance for future full-color micro-display applications based on RGB InGaN micro-LED technology.
Authors
- Pengfei Tian (ORCID: https://orcid.org/0000-0001-8479-2727)
- Daqi Shen
- L. Yan (ORCID: https://orcid.org/0009-0001-3197-1366)
- Xinyi Shan
- Tianyang Ren
- Cuili Tan
- Xugao Cui
- Yuandong Ruan
Institutions
- Fudan University (CN)
Publication Details
- Journal
- Semiconductor Science and Technology
- Published
- 2024-09-10
- DOI
- https://doi.org/10.1088/1361-6641/ad78fb
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24
Funders
- Science and Technology Commission of Shanghai Municipality