Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

Abstract Red–green–blue (RGB) micro light-emitting diodes (micro-LEDs) without distributed Bragg reflector (DBR), with air-separating DBR, and with integrated DBR, were demonstrated. The effect of the DBRs as reflectors on the external quantum efficiency (EQE) and electroluminescence spectra enhancement of RGB micro-LEDs was systematically investigated for realizing higher-performance micro-LEDs for display applications. At 5 A cm −2 , the EQEs of the RGB micro-LEDs with integrated DBR were improved by 38%, 33%, and 32%, respectively, with comparison to the RGB DBR free micro-LEDs. Further, the full width at half maximum (FWHM) of the red micro-LEDs was reduced by 4.3 nm at 50 A cm −2 with the integrated DBR due to the higher enhancement of the central wavelength spectrum. The green and blue micro-LEDs with integrated DBR had higher EQE and the red micro-LEDs with integrated DBR had narrower FWHM compared to those with air-separating DBR. However, the peak wavelength of the RGB micro-LEDs with integrated DBR shifted, resulting in a lower color gamut in CIE 1931. The above work provides guidance for future full-color micro-display applications based on RGB InGaN micro-LED technology.

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Publication Details

Journal
Semiconductor Science and Technology
Published
2024-09-10
DOI
https://doi.org/10.1088/1361-6641/ad78fb
Citations
4
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.24

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article

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

Pengfei Tian, Daqi Shen, L. Yan, Xinyi Shan et al.
4 citations
Semiconductor Science and Technology
GaN-based semiconductor devices and materials
1.24
article

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

Pengfei Tian, Daqi Shen, L. Yan, Xinyi Shan, Tianyang Ren, Cuili Tan, Xugao Cui, Yuandong Ruan
article en
4 citations

Abstract

Abstract Red–green–blue (RGB) micro light-emitting diodes (micro-LEDs) without distributed Bragg reflector (DBR), with air-separating DBR, and with integrated DBR, were demonstrated. The effect of the DBRs as reflectors on the external quantum efficiency (EQE) and electroluminescence spectra enhancement of RGB micro-LEDs was systematically investigated for realizing higher-performance micro-LEDs for display applications. At 5 A cm −2 , the EQEs of the RGB micro-LEDs with integrated DBR were improved by 38%, 33%, and 32%, respectively, with comparison to the RGB DBR free micro-LEDs. Further, the full width at half maximum (FWHM) of the red micro-LEDs was reduced by 4.3 nm at 50 A cm −2 with the integrated DBR due to the higher enhancement of the central wavelength spectrum. The green and blue micro-LEDs with integrated DBR had higher EQE and the red micro-LEDs with integrated DBR had narrower FWHM compared to those with air-separating DBR. However, the peak wavelength of the RGB micro-LEDs with integrated DBR shifted, resulting in a lower color gamut in CIE 1931. The above work provides guidance for future full-color micro-display applications based on RGB InGaN micro-LED technology.

Semiconductor Science and TechnologyVol. 39(11)
Fudan University (CN)
Science and Technology Commission of Shanghai Municipality
Openalex Percentile: Top 21%
GaN-based semiconductor devices and materials
1.24
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