Spin/valley dependent dwell time in an 8-Pmmn borophene junction

Abstract Spin/valley dependent dwell time in 8- Pmmn borophene junction under Rashba spin–orbit interaction (RSOI) is studied. The dwell time as well as transmission probability for incident electrons with spin-up show a different behavior than the incident electrons with spin-down, and these quantities can be controlled effectively by the junction direction, incident angle, the RSOI strength and the barrier width. Also, the dwell time is dependent on the degree of freedom of the valley and shows oscillating behavior with the increase of the barrier width. The spin polarization and spin filtering in 8- Pmmn borophene junction under RSOI can be obtained in the time domain.