The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process

Abstract In advanced wafer manufacturing processes, a wet cleaning system (wet in dry out) integrated with chemical mechanical polishing equipment is the primary form of post-chemical-mechanical polishing (CMP) cleaning. This pioneering study addresses the quantitative description of the contact between a polyvinyl alcohol (PVA) sponge brush and the wafer surface and establishes a relationship between the compression deformation as a function of the pressure on the wafer surface to achieve precise control of the contact between the brush and the wafer. The physical properties of the three types of PVA sponge brushes, namely, porosity, saturated water absorption, and pore change rate, were analyzed, and the effect of particle removal was explored. Finally, the effect of the brush on removing the residual polishing liquid from the wafer surface under different compression deformation conditions was studied, and its internal mechanism was explained. A ‘√’ curve was observed between the compression deformation (stress) and particle removal effect. When the compression deformation (stress) is 0.5 mm (35.11 g), the 26 nm particles on the wafer surface after post-CMP cleaning can reach less than 10ea.

Authors

Institutions

Publication Details

Journal
Semiconductor Science and Technology
Published
2024-09-10
DOI
https://doi.org/10.1088/1361-6641/ad78fa
Citations
1
Primary Topic
Advanced Surface Polishing Techniques
Type
article
Field-Weighted Citation Impact
0.18
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process

Zihang Wu, Jiani Zhang, Yang Shu, Huijun Zhao et al.
1 citations
Semiconductor Science and Technology
Advanced Surface Polishing Techniques
0.18
article

The compression deformation and particles removal of PVA brushes during the post-CMP cleaning process

Zihang Wu, Jiani Zhang, Yang Shu, Huijun Zhao, Yinkui Jiang, Jiajie Liu, Zengyuan Li, Yin Wang, Zhou Fan, Xuejun Li, Haiyang Jin, Guangming Chai, Xiaoyan Zhang, David Wei Zhang, Fuping Chen, Frey Zhou
article en
1 citations

Abstract

Abstract In advanced wafer manufacturing processes, a wet cleaning system (wet in dry out) integrated with chemical mechanical polishing equipment is the primary form of post-chemical-mechanical polishing (CMP) cleaning. This pioneering study addresses the quantitative description of the contact between a polyvinyl alcohol (PVA) sponge brush and the wafer surface and establishes a relationship between the compression deformation as a function of the pressure on the wafer surface to achieve precise control of the contact between the brush and the wafer. The physical properties of the three types of PVA sponge brushes, namely, porosity, saturated water absorption, and pore change rate, were analyzed, and the effect of particle removal was explored. Finally, the effect of the brush on removing the residual polishing liquid from the wafer surface under different compression deformation conditions was studied, and its internal mechanism was explained. A ‘√’ curve was observed between the compression deformation (stress) and particle removal effect. When the compression deformation (stress) is 0.5 mm (35.11 g), the 26 nm particles on the wafer surface after post-CMP cleaning can reach less than 10ea.

Semiconductor Science and TechnologyVol. 39(11)
Shanghai Fudan Microelectronics (China) (CN), Semiconductor Manufacturing International (China) (CN), Jordan Valley Semiconductors (China) (CN)
Openalex Percentile: Top 53%
Advanced Surface Polishing Techniques
0.18
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.