Comparative Analysis of Positive Photoresist and Negative Photoresist in Nanoimprint Lithography Technology

Nanoimprinting technology (NIL) has received widespread attention due to its high precision and high efficiency in the preparation of micro and nanostructures. The key to NIL lies in selecting photoresist materials, with positive and negative photoresists being the main choices. This article aims to comprehensively analyze the advantages and limitations of positive and negative photoresists in NIL, with a focus on performance comparison and scalability for large-scale production. By conducting in-depth research on their properties and applications, this study aims to provide new references for the selection criteria of photoresists in NIL processes. Both positive and negative photoresists have certain advantages and limitations in NIL. Positive photoresist has high resolution and low surface tension, making it suitable for preparing high-precision micro/nanostructures. However, the development process of photoresist is relatively complex, requiring the use of development solution and a longer development time. In addition, the adhesion of positive photoresist to negatively charged surfaces is poor, which may lead to mold detachment or damage. Negative photoresist has high contrast and short development time, making it suitable for large-scale production and high-throughput preparation. The development process of negative photoresist is relatively simple, requiring only the use of developing solution and a shorter development time. However, the resolution of negative photoresist is relatively low and not suitable for preparing high-precision micro/nanostructures. Meanwhile, the surface tension of negative photoresist is relatively high, which may cause the mold to detach or be damaged. This article selects suitable positive or negative photoresists based on their specific application requirements in terms of resolution, surface tension, complexity of development process, and production scale, in order to achieve the best microstructure preparation effect.