Signal Components and Impedance Spectroscopy of Potential p‐Si/n‐CdS/ALD‐ZnO Solar Cells: EIS and SCAPS‐1D Treatments

Abstract A silicon heterojunction (SHJ) solar cell with the attractive and widely used atomic layer deposited (ALD)‐ZnO/n‐CdS/p‐Si configuration is examined in this work to learn more about its electrical properties. Using EIS and SCAPS‐1D, a comprehensive model of the device is created and then simulated. Theoretical aspects of the cell are examined through the use of similar electrical circuit models, focusing on the transmittance spectrum made possible by the ALD‐ZnO layer's low reflectance and high visible transmittance. In this study, the C–V tool is used to study the trap states in the silicon absorber layer under different lighting conditions and wavelengths. The doping concentration and built‐in potential are determined using the Mott–Schottky technique. In addition, the cell's properties are investigated by measuring its G–V, G–F, C–T, and C–F in different real‐world scenarios. As a means of visualizing the electrochemical impedance data, Nyquist plots—sometimes called Cole–Cole plots—are utilized. By utilizing absolute impedance and phase shifts, Bode plots are employed to examine the system's frequency response. Last, the results of the SHJ cell's spectral response measurements are given, which confirm the results of the Nyquist plots.