Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Abstract An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field‐effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain‐source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics .

Authors

Institutions

Publication Details

Journal
Advanced Electronic Materials
Published
2024-09-08
DOI
https://doi.org/10.1002/aelm.202400590
Citations
6
Primary Topic
Magnetism in coordination complexes
Type
article
Field-Weighted Citation Impact
0.71

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Isabelle Séguy, Lionel Salmon, Gábor Molnár, Ion Soroceanu et al.
6 citations
Advanced Electronic Materials
Magnetism in coordination complexes
0.71
article

Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field‐Effect Transistor

Isabelle Séguy, Lionel Salmon, Gábor Molnár, Ion Soroceanu, Yuteng Zhang, Seyed Ehsan Alavi, Aurelian Rotaru, Azzedine Bousseksou, Dennis Wanyoike Kamau
article en
6 citations

Abstract

Abstract An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field‐effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain‐source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics .

Advanced Electronic MaterialsVol. 11(5)
Ştefan cel Mare University of Suceava (RO), Centre National de la Recherche Scientifique (FR), Université Toulouse III - Paul Sabatier (FR), Université Fédérale de Toulouse Midi-Pyrénées (FR), Laboratoire d'Analyse et d'Architecture des Systèmes (FR), Institut National des Sciences Appliquées de Toulouse (FR), Institut National Polytechnique de Toulouse (FR), Laboratoire de Chimie de Coordination (FR)
European Commission, Agence Nationale de la Recherche, Centre National de la Recherche Scientifique, H2020 European Research Council
Affordable and clean energy
Openalex Percentile: Top 35%
Magnetism in coordination complexes
0.71
DOIOpen Access PDFOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.