Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High‐Entropy Semiconductors AgMnGePbSbTe <sub>5</sub>

Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe<sub>5</sub> is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag<sub>2</sub>Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe<sub>5</sub> also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 H<sub>V</sub>.

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Publication Details

Journal
Advanced Materials
Published
2024-09-09
DOI
https://doi.org/10.1002/adma.202407982
Citations
28
Primary Topic
Advanced Thermoelectric Materials and Devices
Type
article
Field-Weighted Citation Impact
3.28

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article

Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High‐Entropy Semiconductors AgMnGePbSbTe 5

Qingyu Yan, Junyou Yang, Qinghui Jiang, Yingchao Wei et al.
28 citations
Advanced Materials
Advanced Thermoelectric Materials and Devices
3.28
article

Synergistic Performance of Thermoelectric and Mechanical in Nanotwinned High‐Entropy Semiconductors AgMnGePbSbTe 5

Qingyu Yan, Junyou Yang, Qinghui Jiang, Yingchao Wei, Mercouri G. Kanatzidis, Vinayak P. Dravid, Jinfeng Dong, Huabing Yin, Shaoping Chen, Xin Li, Qiang Zhang, Wang Li, Chengjun Li, Dan Zhang, Yukun Liu, Yubo Luo, Zheng Ma
article en
28 citations

Abstract

Introducing nanotwins in thermoelectric materials represents a promising approach to achieving such a synergistic combination of thermoelectric properties and mechanical properties. By increasing configurational entropy, a sharply reduced stacking fault energy in a new nanotwinned high-entropy semiconductor AgMnGePbSbTe<sub>5</sub> is reached. Dense coherent nanotwin boundaries in this system provide an efficient phonon scattering barrier, leading to a high figure of merit ZT of ≈2.46 at 750 K and a high average ZT of ≈1.54 (300-823 K) with the presence of Ag<sub>2</sub>Te nanoprecipitate in the sample. More importantly, owing to the dislocation pinning caused by coherent nanotwin boundaries and the chemical short-range disorder caused by the high configurational entropy effect, AgMnGePbSbTe<sub>5</sub> also exhibits robust mechanical properties, with flexural strength of 82 MPa and Vickers hardness of 210 H<sub>V</sub>.

Advanced MaterialsVol. 36(45)
Northwestern University (US), Nanyang Technological University (SG), Henan University (CN), Hebei University (CN), Huazhong University of Science and Technology (CN), Taiyuan University of Technology (CN)
U.S. Department of Energy, National Natural Science Foundation of China, Office of Science, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities, Basic Energy Sciences
Affordable and clean energy
Openalex Percentile: Top 4%
Advanced Thermoelectric Materials and Devices
3.28
DOISourceOpenAlex
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