Enhancing superconductivity in CoSi2 films with laser annealing

Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lattice parameter, and residual resisitivity are consistent with the formation of the defective CsCl structure. The CoSi2 phase was found after prolonging the thermal treatment with additional pulses or rapid thermal annealing. Because CoSi is skipped in the phase sequence, CoSi2 layers are more uniform in thickness, have an increased superconductivity and a reduced formation temperature. This approach is compatible with the SALICIDE process and can be used to form smooth contacts in superconducting or regular transistors.

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Publication Details

Journal
Journal of Applied Physics
Published
2024-09-09
DOI
https://doi.org/10.1063/5.0218950
Citations
2
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.68
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article

Enhancing superconductivity in CoSi2 films with laser annealing

F. Gustavo, F. Nemouchi, S. Guillemin, Patrice Gergaud et al.
2 citations
Journal of Applied Physics
Semiconductor materials and interfaces
0.68
article

Enhancing superconductivity in CoSi2 films with laser annealing

F. Gustavo, F. Nemouchi, S. Guillemin, Patrice Gergaud, S. Kerdilès, János L. Lábár, Paul Dumas, Mathieu Opprecht, B. Pécz, Guillaume Freychet, F. Lefloch
article en
2 citations

Abstract

Laser annealing was employed to trigger the solid-state reaction of a thin Co film (2.5 nm) with undoped Si. A metastable disilicide layer was obtained after one laser pulse close to the melt threshold. Its diffraction pattern, relaxed lattice parameter, and residual resisitivity are consistent with the formation of the defective CsCl structure. The CoSi2 phase was found after prolonging the thermal treatment with additional pulses or rapid thermal annealing. Because CoSi is skipped in the phase sequence, CoSi2 layers are more uniform in thickness, have an increased superconductivity and a reduced formation temperature. This approach is compatible with the SALICIDE process and can be used to form smooth contacts in superconducting or regular transistors.

Journal of Applied PhysicsVol. 136(10)
Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR), CEA Grenoble (FR), Institute for Technical Physics and Materials Science (HU), Laboratoire d'Électronique des Technologies de l'Information (FR), HUN-REN Centre for Energy Research (HU), Université Grenoble Alpes (FR)
Clean water and sanitation
Openalex Percentile: Top 31%
Semiconductor materials and interfaces
0.68
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Enhancing superconductivity in CoSi2 films with laser annealing — F. Gustavo, F. Nemouchi, et al. · Journal of Applied Physics (2024) | TGRS Research Map | TGRS