Ultralow Roll-off Thermally Activated Delayed Fluorescent Light-Emitting Diodes Based on Furo[2,3-<i>b</i>]quinoxaline Emitters

Herein, a Y-type compound (<b>67dMeOTPA-FQ</b>) and a T-type compound (<b>58dMeOTPA-FQ</b>) based on furo[2,3-<i>b</i>]quinoxaline were synthesized. The theory calculation shows the S<sub>1</sub> and T<sub>1</sub> of both compounds own a charge-transfer feature while their T<sub>2</sub> states have a local excitation feature. The calculated <i>k</i><sub>RISC(T2-S1)</sub> is one to 2 orders of magnitude larger than <i>k</i><sub>RISC(T1-S1)</sub>. Thus, the nonadiabatic spin-vibronic mechanism involved in the T<sub>2</sub> state is suggested to be responsible for the thermally activated delayed fluorescence (TADF) feature. Meanwhile, when 2-methyl-9,10-bis(naphthalen-2-yl)anthracene is selected as host, the maximum luminance of the device based on <b>67dMeOTPA-FQ</b> is up to 104215 cd·m<sup>-2</sup>, and the external quantum efficiency (EQE) keeps in the 8.2-8.0% range with the luminance changed from 55.0 cd·m<sup>-2</sup> to 90000 cd·m<sup>-2</sup>, only 2.4% efficiency roll-off. As for <b>58dMeOTPA-FQ</b>, a slightly lower EQE of 7.1-6.7% with the luminance range of 1-40000 cd·m<sup>-2</sup> was achieved for orange-red emission. Both the reverse intersystem crossing (RISC) and triplet-triplet annihilation mechanisms are supposed to concurrently contribute to the utilization of triplet excitons and suppress the notorious efficiency roll-off observed in TADF-based devices.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2024-09-09
DOI
https://doi.org/10.1021/acs.jpclett.4c02363
Citations
3
Primary Topic
Organic Light-Emitting Diodes Research
Type
article
Field-Weighted Citation Impact
0.63

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article

Ultralow Roll-off Thermally Activated Delayed Fluorescent Light-Emitting Diodes Based on Furo[2,3-b]quinoxaline Emitters

Lei Gou, BoHua Zhang, Dongdong Wang, Zhaoxin Wu et al.
3 citations
The Journal of Physical Chemistry Letters
Organic Light-Emitting Diodes Research
0.63
article

Ultralow Roll-off Thermally Activated Delayed Fluorescent Light-Emitting Diodes Based on Furo[2,3-b]quinoxaline Emitters

Lei Gou, BoHua Zhang, Dongdong Wang, Zhaoxin Wu, Mingxin Wu, Xinwen Zhang, MeiTing Luo, XiaoLi Lei, ChuanMing Wu, YeYang Wang
article en
3 citations

Abstract

Herein, a Y-type compound (<b>67dMeOTPA-FQ</b>) and a T-type compound (<b>58dMeOTPA-FQ</b>) based on furo[2,3-<i>b</i>]quinoxaline were synthesized. The theory calculation shows the S<sub>1</sub> and T<sub>1</sub> of both compounds own a charge-transfer feature while their T<sub>2</sub> states have a local excitation feature. The calculated <i>k</i><sub>RISC(T2-S1)</sub> is one to 2 orders of magnitude larger than <i>k</i><sub>RISC(T1-S1)</sub>. Thus, the nonadiabatic spin-vibronic mechanism involved in the T<sub>2</sub> state is suggested to be responsible for the thermally activated delayed fluorescence (TADF) feature. Meanwhile, when 2-methyl-9,10-bis(naphthalen-2-yl)anthracene is selected as host, the maximum luminance of the device based on <b>67dMeOTPA-FQ</b> is up to 104215 cd·m<sup>-2</sup>, and the external quantum efficiency (EQE) keeps in the 8.2-8.0% range with the luminance changed from 55.0 cd·m<sup>-2</sup> to 90000 cd·m<sup>-2</sup>, only 2.4% efficiency roll-off. As for <b>58dMeOTPA-FQ</b>, a slightly lower EQE of 7.1-6.7% with the luminance range of 1-40000 cd·m<sup>-2</sup> was achieved for orange-red emission. Both the reverse intersystem crossing (RISC) and triplet-triplet annihilation mechanisms are supposed to concurrently contribute to the utilization of triplet excitons and suppress the notorious efficiency roll-off observed in TADF-based devices.

The Journal of Physical Chemistry LettersVol. 15(37)
Chang'an University (CN), Nanjing University of Posts and Telecommunications (CN), Xi’an University of Posts and Telecommunications (CN), Xi'an Jiaotong University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 32%
Organic Light-Emitting Diodes Research
0.63
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