Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>N</a:mi></a:mrow></a:math>-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:mrow><b:mi>N</b:mi></b:mrow></b:math> were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in on-site potential along the chain—which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision. Published by the American Physical Society 2024

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Publication Details

Journal
Physical Review Research
Published
2024-09-09
DOI
https://doi.org/10.1103/physrevresearch.6.033268
Citations
1
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
0.34

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article

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Van Dong Pham, Felix von Oppen, Stefan Fölsch, Steven C. Erwin et al.
1 citations
Physical Review Research
Topological Materials and Phenomena
0.34
article

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface: Odd numbers of quantum dots

Van Dong Pham, Felix von Oppen, Stefan Fölsch, Steven C. Erwin, Yi Pan, Kiyoshi Kanisawa
article en
1 citations

Abstract

Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into <a:math xmlns:a="http://www.w3.org/1998/Math/MathML"><a:mrow><a:mi>N</a:mi></a:mrow></a:math>-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd <b:math xmlns:b="http://www.w3.org/1998/Math/MathML"><b:mrow><b:mi>N</b:mi></b:mrow></b:math> were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in on-site potential along the chain—which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision. Published by the American Physical Society 2024

Physical Review ResearchVol. 6(3)
United States Naval Research Laboratory (US), NTT Basic Research Laboratories (JP), Paul Drude Institute for Solid State Electronics (DE), Freie Universität Berlin (DE), Xi'an Jiaotong University (CN)
Deutsche Forschungsgemeinschaft, National Key Research and Development Program of China
Openalex Percentile: Top 41%
Topological Materials and Phenomena
0.34
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