Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu<sub>2</sub>O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 10<sup>4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> on SiO<sub>2</sub>/Si and 10<sup>5</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

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Publication Details

Journal
Advanced Materials
Published
2024-09-09
DOI
https://doi.org/10.1002/adma.202404590
Citations
12
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
1.41

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Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

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Advanced Materials
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article

Decoupled High‐Mobility Graphene on Cu(111)/Sapphire via Chemical Vapor Deposition

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article en
12 citations

Abstract

The growth of high-quality graphene on flat and rigid templates, such as metal thin films on insulating wafers, is regarded as a key enabler for technologies based on 2D materials. In this work, the growth of decoupled graphene is introduced via non-reducing low-pressure chemical vapor deposition (LPCVD) on crystalline Cu(111) films deposited on sapphire. The resulting film is atomically flat, with no detectable cracks or ripples, and lies atop of a thin Cu<sub>2</sub>O layer, as confirmed by microscopy, diffraction, and spectroscopy analyses. Post-growth treatment of the partially decoupled graphene enables full and uniform oxidation of the interface, greatly simplifying subsequent transfer processes, particularly dry-pick up - a task that proves challenging when dealing with graphene directly synthesized on metallic Cu(111). Electrical transport measurements reveal high carrier mobility at room temperature, exceeding 10<sup>4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> on SiO<sub>2</sub>/Si and 10<sup>5</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> upon encapsulation in hexagonal boron nitride (hBN). The demonstrated growth approach yields exceptional material quality, in line with micro-mechanically exfoliated graphene flakes, and thus paves the way toward large-scale production of pristine graphene suitable for high-performance next-generation applications.

Advanced MaterialsVol. 36(44)
Scuola Normale Superiore (IT), Institute of Photonic Sciences (ES), National Institute for Materials Science (JP), Italian Institute of Technology (IT), Istituto Nanoscienze (IT), Center for Nanotechnology Innovation (IT)
Scuola Normale Superiore, Graphene Flagship, European Commission, Istituto Italiano di Tecnologia, Japan Society for the Promotion of Science
Openalex Percentile: Top 15%
Graphene research and applications
1.41
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