Spin-dependent Goos-Hänchen shift for electron in single-layered semiconductor microstructure modulated by Rashba spin–orbit coupling

• GH effect is studied in SLSN modulated by Rashba SOC. • GH displacement depends on electron spins and an evident spin polarization appears. • Spin polarization ratio is tuned by external electric field or semiconductor-layer thickness. • A controllable spatial electron-spin splitter is obtained. We theoretically investigate Goos-Hänchen effect for electron in single-layered semiconductor microstructure (SLSM) modulated by Rashba spin–orbit coupling (SOC). Due to the SOC effect, GH displacement is obviously dependent on spins, which allows electron spins to be separated in space dimension and results in spin polarization of electrons in semiconductors. Spin polarization ratio is associated with incident energy, incident direction and in-plane wave vector, e.g., it reaches maximum at resonance, but no spin polarization effect appears at normal incidence. In particular, both magnitude and sign of spin polarization ratio are controlled by external electric field or semiconductor-layer thickness, therefore, a manipulable spatial electron-spin splitter is obtained for semiconductor spintronics device applications.