Structural Characterization of P-type SnO<SUB>2</SUB>: Ga and Sb-co-doped SnO2:Ga Thin Films Prepared by Sol-Gel Dip-Coating Method for Potential Optoelectronic Applications

This paper delves into the synthesis and characterization of p-type Transparent Conducting Oxides (TCOs), with a specific focus on Gallium-doped tin oxide (SnO2:Ga)and Antimony co-doped Gallium-tin oxide thin films. The films are deposited on blue microscope glass substrates utilizing the sol-gel dip-coating method. The study tackles the challenges related to the application of p-type TCOs, highlighting advancements in electrical performance compared to their n-type counterparts. Structural characterization through X-ray diffraction indicates both crystalline and amorphous nature of the films. Sharp and narrow diffraction peaks confirm the well-defined doped phases of Ga and Sb at atomic substitutional sites of SnO2. Different phases are identified for pure SnO2and Ga-doped SnO2 films. The preferential orientation shifts with doping concentrations. Sb-co-doped SnO2 films show the highest peak intensities. The average crystallite sizes of the thin films increase with doping concentrations, ranging from 19.83 nm to 32.24 nm for Ga-doped films and 33.91 nm to 40.88 nm for Sb-co-doped films. The structural analyses suggest that SnO2:Ga and Sb-co-doped SnO2:Ga thin films are suitable p-type TCO materials for optoelectronic applications. Overall, this research contributes valuable insights into improving the performance of p-type TCOs and addresses the limitations associated with their characterization.