Oxygen Vacancy Activates the Second-Nearest-Neighbor Lattice Oxygen for Oxidation Reaction

Oxygen vacancies on the oxide surface are regarded to play critical roles in catalytic oxidation reactions because they can alter the electronic and geometric properties of oxide catalysts. However, the effects of the oxygen vacancy on the CO oxidation activity of the surrounding lattice oxygen have remained elusive. In this work, using high-pressure scanning tunneling microscopy we identify that oxygen vacancy can activate surface lattice oxygen on the Mn<sub>3</sub>O<sub>4</sub> thin layer. It is found that CO reacts with the lattice oxygen located at the second-nearest-neighbor position to the original oxygen vacancies more easily than that at the closest position and at the defect-free surface. This can be ascribed to the lower formation energy of the oxygen vacancies. Our study provides atomic-level insights into the promoting effect of oxygen vacancies on catalytic oxidation reactions.

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Publication Details

Journal
The Journal of Physical Chemistry Letters
Published
2024-09-06
DOI
https://doi.org/10.1021/acs.jpclett.4c02133
Citations
2
Primary Topic
Catalytic Processes in Materials Science
Type
article
Field-Weighted Citation Impact
0.23

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article

Oxygen Vacancy Activates the Second-Nearest-Neighbor Lattice Oxygen for Oxidation Reaction

Yijing Liu, Qiang Fu, Rentao Mu, Le Lin
2 citations
The Journal of Physical Chemistry Letters
Catalytic Processes in Materials Science
0.23
article

Oxygen Vacancy Activates the Second-Nearest-Neighbor Lattice Oxygen for Oxidation Reaction

Yijing Liu, Qiang Fu, Rentao Mu, Le Lin
article en
2 citations

Abstract

Oxygen vacancies on the oxide surface are regarded to play critical roles in catalytic oxidation reactions because they can alter the electronic and geometric properties of oxide catalysts. However, the effects of the oxygen vacancy on the CO oxidation activity of the surrounding lattice oxygen have remained elusive. In this work, using high-pressure scanning tunneling microscopy we identify that oxygen vacancy can activate surface lattice oxygen on the Mn<sub>3</sub>O<sub>4</sub> thin layer. It is found that CO reacts with the lattice oxygen located at the second-nearest-neighbor position to the original oxygen vacancies more easily than that at the closest position and at the defect-free surface. This can be ascribed to the lower formation energy of the oxygen vacancies. Our study provides atomic-level insights into the promoting effect of oxygen vacancies on catalytic oxidation reactions.

The Journal of Physical Chemistry LettersVol. 15(37)
Dalian Institute of Chemical Physics (CN), Chinese Academy of Sciences (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Dalian Institute of Chemical Physics, National Key Research and Development Program of China, Fundamental Research Funds for the Central Universities
Openalex Percentile: Top 51%
Catalytic Processes in Materials Science
0.23
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