A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm/ ° C From -20 °C to 125 °C

This article presents a sub-ranging current reference with a low-temperature coefficient (TC) across a wide temperature range. By using a TC-adjustable current source and a process-insensitive sub-range detector, the impact of second-order TC can be reduced by nearly fourfold, without any discontinuities at the subrange boundaries. Implemented in a 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m CMOS process, the proposed current reference achieves an average TC of 11.4-ppm/°C across from -20 °C to 125 °C, obtained from 45 samples across five process corners without chip-by-chip calibration. The proposed current source exhibits low line and load sensitivities of 365 and 181 ppm/V, respectively, and an integrated noise of 38.9 pArms within a 10-Hz bandwidth.

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Publication Details

Journal
IEEE Journal of Solid-State Circuits
Published
2024-09-06
DOI
https://doi.org/10.1109/jssc.2024.3450950
Citations
6
Primary Topic
Advanced Electrical Measurement Techniques
Type
article
Field-Weighted Citation Impact
1.25
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article

A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm/ ° C From -20 °C to 125 °C

Pangi Park, SeongHwan Cho, Junghyup Lee
6 citations
IEEE Journal of Solid-State Circuits
Advanced Electrical Measurement Techniques
1.25
article

A PVT-Insensitive Sub-Ranging Current Reference Achieving 11.4-ppm/ ° C From -20 °C to 125 °C

Pangi Park, SeongHwan Cho, Junghyup Lee
article en
6 citations

Abstract

This article presents a sub-ranging current reference with a low-temperature coefficient (TC) across a wide temperature range. By using a TC-adjustable current source and a process-insensitive sub-range detector, the impact of second-order TC can be reduced by nearly fourfold, without any discontinuities at the subrange boundaries. Implemented in a 0.18-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m CMOS process, the proposed current reference achieves an average TC of 11.4-ppm/°C across from -20 °C to 125 °C, obtained from 45 samples across five process corners without chip-by-chip calibration. The proposed current source exhibits low line and load sensitivities of 365 and 181 ppm/V, respectively, and an integrated noise of 38.9 pArms within a 10-Hz bandwidth.

IEEE Journal of Solid-State CircuitsVol. 59(12)
Korea Advanced Institute of Science and Technology (KR), Daegu Gyeongbuk Institute of Science and Technology (KR)
Openalex Percentile: Top 20%
Advanced Electrical Measurement Techniques
1.25
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