Self-Rectifying Resistive Switching Characteristics in CsMAFAPbIBr Perovskite-Based Memristor Device

Self-rectifying memristors have been attracting attentions to suppress sneak current in crossbar without raising integration complexity. In this work, memristors based on Cs0.05(MA0.17FA<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{83}}\text {)}_{{0}.{95}}$ </tex-math></inline-formula>Pb(I0.83Br<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{17}}\text {)}_{{3}}$ </tex-math></inline-formula> perovskite film are presented with a high rectification ratio around 514 and an on/off ratio of 1362. The device can continuously operate for <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> cycles and the retention time is over <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$10^{{4}}$ </tex-math></inline-formula> seconds at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$85~^{\circ }$ </tex-math></inline-formula>C. In-depth mechanistic analysis reveals that the resistive-switching behavior originates from the migration of iodide ions, which is accompanied by a high rectification ratio produced by the high barrier at the interface between Au and Cs0.05(MA0.17FA<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{83}}\text {)}_{{0}.{95}}$ </tex-math></inline-formula> Pb(I0.83Br<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{0}.{17}}\text {)}_{{3}}$ </tex-math></inline-formula>. The maximum effective array size based on the perovskite memristor is up to 1747 with a read margin (RM) of 10%. We believe that this work can pave a way for the development of perovskites thin films in high-density memristive arrays.