Thin-film organic photodetectors in the near-UV range

The article discusses the optoelectronic properties of the new poly[2-ethyl-3-methylindole]. Samples of phototransistors were obtained in which thin films of polyindole were used as a transport layer, their characteristics were measured and analyzed under the influence of ultraviolet radiation with a wavelength of 350 nm. Organic field-effect transistors based on synthesized pyrrolidinofullerenes have also been created. The family of output characteristics for pyrrolidinofullene and polyindole was determined. The mobility of charge carriers in thin films of polyindole and pyrrolidinofullerene has been estimated. The kinetics of the current photoresponse in transistors based on polyindole and pyrrolidinofullerene films has been studied.