Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond” [Jun 24 174-183]

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Journal
IEEE Transactions on Device and Materials Reliability
Published
2024-09-01
DOI
https://doi.org/10.1109/tdmr.2024.3429780
Primary Topic
Semiconductor materials and devices
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article
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article

Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond” [Jun 24 174-183]

C. Diouf, Joycelyn Hai, Tidjani Garba-Seybou, F. Cacho et al.
IEEE Transactions on Device and Materials Reliability
Semiconductor materials and devices
article

Correction to “Universal Dielectric Breakdown Modeling Under Off-State TDDB for Ultra-Scaled Device From 130 nm to 28 nm Nodes and Beyond” [Jun 24 174-183]

C. Diouf, Joycelyn Hai, Tidjani Garba-Seybou, F. Cacho, X. Federspiel, A. Bravaix
article en

Abstract

No abstract available for this paper.
IEEE Transactions on Device and Materials ReliabilityVol. 24(3)
Institut Supérieur de l'Électronique et du Numérique (FR), STMicroelectronics (France) (FR)
Openalex Percentile: Top 88%
Semiconductor materials and devices
DOISourceOpenAlex
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