Halide perovskite memristors for optoelectronic memory and computing applications
Abstract Halide perovskites are considered as promising memristive materials for next‐generation optoelectronic devices. This review concisely summarizes the recent development of halide perovskite memristors and highlights their advancements in optoelectronic applications: light‐induced low power switches, optoelectronic logic operations, optoelectronic neuromorphic computation, and artificial vision systems. Finally, we address the challenges and future development prospects of halide perovskites‐based memristors. This review highlights the promising potential of halide perovskite materials for future optoelectronic memory and computing applications.
Authors
- Xiaoning Zhao (ORCID: https://orcid.org/0000-0002-0057-8609)
- Xuanyu Shan (ORCID: https://orcid.org/0000-0002-6161-7835)
- Haiyang Xu (ORCID: https://orcid.org/0000-0002-9457-4552)
- Xiaohan Zhang (ORCID: https://orcid.org/0000-0002-4821-9795)
- Zhongqiang Wang
- Yichun Liu
- Yue Wang (ORCID: https://orcid.org/0000-0002-7496-8888)
Institutions
- Northeast Normal University (CN)
- Changchun University of Technology (CN)
Publication Details
- Journal
- Information & Functional Materials
- Published
- 2024-09-04
- DOI
- https://doi.org/10.1002/ifm2.23
- Citations
- 19
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 3.96
Funders
- National Natural Science Foundation of China
- Ministry of Science and Technology of the People's Republic of China
- People's Government of Jilin Province
- Fundamental Research Funds for the Central Universities